Computer Engineering Commons^™

High-Speed Digital And Mixed-Signal Components For X– And Ku–Band Direct Digital Synthesizers In Indium Phosphide Dhbt Technology, Steven Eugene Turner

Electronic Theses and Dissertations

Recently reported double heterojunction bipolar transistor (DHBT) devices manufactured in Indium Phosphide (InP) technology with ft and fmax both over 300 GHz enable advanced high-speed digital and mixed-signal circuits. In this thesis, the use of InP DHBT devices for high-speed accumulator circuits and X– and Ku–band direct digital synthesizer (DDS) circuits are investigated. At these frequencies, new technological challenges in the design of digital and mixed-signal circuits arise in areas including power consumption and clock distribution. This thesis addresses the speed/power tradeoffs in high-speed accumulator designs, the design of DDS circuits, and clock distribution simulation. The results of six accumulator …