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Electrical and Computer Engineering
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
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Full-Text Articles in Computer Engineering
Expected Cost Penalty Due To Deviation From Security-Constrained Dispatch, Veravut Dheraprasart
Expected Cost Penalty Due To Deviation From Security-Constrained Dispatch, Veravut Dheraprasart
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
This thesis introduces and evaluates a new index called ”Expected Cost Penalty Due to Deviation From Security Constrained Dispatch” (ECP_SCD) for interconnected power systems planning. This index represents the optimal operating cost of the system taking into account the uncertainties such as random failure of generating units, transformer, and transmission lines in interconnected power systems. The significance of this index is that it represents the minimum operating cost for a contingency event and can be used for contingency screening (ranking). This index also indicates the impact of equipment reliability on the average cost penalty of all contingency events. Moreover, this …
Effect Of Laser-Assisted Resonant Excitation On The Growth Of Gan Films, H. Rabiee Golgir, Y. Gao, Y. S. Zhou, L. S. Fan, Kamran Keramatnejad, Yongfeng Lu
Effect Of Laser-Assisted Resonant Excitation On The Growth Of Gan Films, H. Rabiee Golgir, Y. Gao, Y. S. Zhou, L. S. Fan, Kamran Keramatnejad, Yongfeng Lu
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Gallium nitride (GaN) films were grown using laser-assisted metal organic chemical vapor deposition (LMOCVD). The vibrational mode (1084.63 cm-1) of ammonia (NH3) molecules was resonantly excited using a wavelength-tunable CO2 laser at a laser wavelength of 9.219 μm due to its high absorption cross-section. Through wavelength-matched resonant excitation of the NH3 molecules, highly c-axis oriented GaN films were successfully deposited on sapphire (α-Al2O3) substrates at low temperatures (250 to 600oC). The strong (0001) GaN peak in Xray diffraction spectra confirmed the good crystalline quality of GaN films. Additionally, the …