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Full-Text Articles in Computer Engineering
Non-Local Model For The Spatial Distribution Of Impact Ionization Events In Avalanche Photodiodes, David A. Ramirez, Majeed M. Hayat, Andrew S. Huntington, George M. Williams
Non-Local Model For The Spatial Distribution Of Impact Ionization Events In Avalanche Photodiodes, David A. Ramirez, Majeed M. Hayat, Andrew S. Huntington, George M. Williams
Electrical and Computer Engineering Faculty Research and Publications
We report an extension of the analytical dead space multiplication theory that provides the means to theoretically determine the spatial distribution of electron and hole impact-ionization events in an arbitrarily specified heterojunction multiplication region. The model can be used to understand the role of the dead space in regularizing the locations of impact ionization. It can also be utilized to analyze, design, and optimize new generations of ultra-low noise, multistaged gain avalanche photodiodes based upon judiciously energizing and relaxing carriers to enhance electron impact ionization and suppress hole impact ionization.
Thin 3d Multiplication Regions In Plasmonically Enhanced Nanopillar Avalanche Detectors, Pradeep Senanayake, Chung-Hong Hung, Alan C. Farrell, David A. Ramirez, Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, Diana L. Huffaker
Thin 3d Multiplication Regions In Plasmonically Enhanced Nanopillar Avalanche Detectors, Pradeep Senanayake, Chung-Hong Hung, Alan C. Farrell, David A. Ramirez, Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, Diana L. Huffaker
Electrical and Computer Engineering Faculty Research and Publications
We demonstrate a nanopillar (NP) device structure for implementing plasmonically enhanced avalanche photodetector arrays with thin avalanche volumes (∼ 310 nm × 150 nm × 150 nm). A localized 3D electric field due to a core–shell PN junction in a NP acts as a multiplication region, while efficient light absorption takes place via surface plasmon polariton Bloch wave (SPP-BW) modes due to a self-aligned metal nanohole lattice. Avalanche gains of ∼216 at 730 nm at −12 V are obtained. We show through capacitance–voltage characterization, temperature-dependent breakdown measurements, and detailed device modeling that the avalanche region is on the order of …
Computation Of Bit-Error Probabilities For Optical Receivers Using Thin Avalanche Photodiodes, Byonghyok Choi, Majeed M. Hayat
Computation Of Bit-Error Probabilities For Optical Receivers Using Thin Avalanche Photodiodes, Byonghyok Choi, Majeed M. Hayat
Electrical and Computer Engineering Faculty Research and Publications
The large-deviation-based asymptotic-analysis and importance-sampling methods for computing bit-error probabilities for avalanche-photodiode (APD) based optical receivers, developed by Letaief and Sadowsky [IEEE Trans. Inform. Theory, vol. 38, pp. 1162-1169, 1992], are extended to include the effect of dead space, which is significant in high-speed APDs with thin multiplication regions. It is shown that the receiver's bit-error probability is reduced as the magnitude of dead space increases relative to the APD's multiplication-region width. The calculated error probabilities and receiver sensitivities are also compared with those obtained from the Chernoff bound.
A New Approach For Computing The Bandwidth Statistics Of Avalanche Photodiodes, Majeed M. Hayat, Guoquan Dong
A New Approach For Computing The Bandwidth Statistics Of Avalanche Photodiodes, Majeed M. Hayat, Guoquan Dong
Electrical and Computer Engineering Faculty Research and Publications
A new approach for characterizing the avalanche-buildup-time-limited bandwidth of avalanche photodiodes (APDs) is introduced which relies on the direct knowledge of the statistics of the random response time. The random response time is the actual duration of the APD’s finite buildup-limited random impulse response function. A theory is developed characterizing the probability distribution function (PDF) of the random response time. Recurrence equations are derived and numerically solved to yield the PDF of the random response time. The PDF is then used to compute the mean and the standard deviation of the bandwidth. The dependence of the mean and the standard …