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Full-Text Articles in Chemical Engineering
Etching With Electron Beam Generated Plasmas, D. Leonhardt, Scott G. Walton, Christopher Muratore, Richard F. Fernsler, R. A. Meger
Etching With Electron Beam Generated Plasmas, D. Leonhardt, Scott G. Walton, Christopher Muratore, Richard F. Fernsler, R. A. Meger
Chemical and Materials Engineering Faculty Publications
A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was …
Effect Of Plasma Flux Composition On The Nitriding Rate Of Stainless Steel, Christopher Muratore, Scott G. Walton, D. Leonhardt, Richard F. Fernsler, David D. Blackwell, R. A. Meger
Effect Of Plasma Flux Composition On The Nitriding Rate Of Stainless Steel, Christopher Muratore, Scott G. Walton, D. Leonhardt, Richard F. Fernsler, David D. Blackwell, R. A. Meger
Chemical and Materials Engineering Faculty Publications
The total ion flux and nitriding rate for stainless steel specimens exposed to a modulated electron beam generated argon-nitrogen plasma were measured as a function of distance from the electron beam axis. The total ion flux decreased linearly with distance, but the nitriding rate increased under certain conditions, contrary to other ion flux/nitriding rate comparisons published in the literature. Variation in ion flux composition with distance was explored with a mass spectrometer and energy analyzer as a possible explanation for the anomalous nitriding rate response to ion flux magnitude. A transition in ion flux composition from mostly N2 1 to …