Chemical Engineering Commons^™

Atomic Layer Deposition Of High Quality Hfo2 Using In-Situ Formed Hydrophilic Oxide As An Interfacial Layer, Lei Han, Jie Pan, Qinglin Zhang, Shibin Li, Zhi Chen

Electrical and Computer Engineering Faculty Publications

High-quality HfO₂ cannot be grown directly on Si substrate using atomic layer deposition (ALD), and an interfacial oxide layer is needed. Traditionally, interfacial oxide layer is formed either in SC1 solution (2 NH₄OH: 4 H₂O₂: 200 H₂O) or by ozonated water spraying. A highly hydrophilic SiO₂ interfacial layer was in-situ formed in the ALD chamber using 1 cycle of ozone and water. The HfO₂ deposited on this interfacial layer showed great growth linearity. The gate leakage current is comparable to that formed using chemical oxide as the interfacial layer. …