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Full-Text Articles in Chemical Engineering
Atomic Layer Deposition Of High Quality Hfo2 Using In-Situ Formed Hydrophilic Oxide As An Interfacial Layer, Lei Han, Jie Pan, Qinglin Zhang, Shibin Li, Zhi Chen
Atomic Layer Deposition Of High Quality Hfo2 Using In-Situ Formed Hydrophilic Oxide As An Interfacial Layer, Lei Han, Jie Pan, Qinglin Zhang, Shibin Li, Zhi Chen
Electrical and Computer Engineering Faculty Publications
High-quality HfO2 cannot be grown directly on Si substrate using atomic layer deposition (ALD), and an interfacial oxide layer is needed. Traditionally, interfacial oxide layer is formed either in SC1 solution (2 NH4OH: 4 H2O2: 200 H2O) or by ozonated water spraying. A highly hydrophilic SiO2 interfacial layer was in-situ formed in the ALD chamber using 1 cycle of ozone and water. The HfO2 deposited on this interfacial layer showed great growth linearity. The gate leakage current is comparable to that formed using chemical oxide as the interfacial layer. …