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Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Electron Beam Effects In The Analysis Of Compound Semiconductors And Devices, Nancy Burnham, Ll Kazmerski, Ab Swartzlander, Aj Nelson, Se Asher
Nancy A. Burnham
The effects of electron beams on the analysis of CuInSe2surfaces are examined in this paper. Potential changes in the surface chemistry—including oxidation and desorption—under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam‐induced phenomena.
Electron Energy‐Loss Spectroscopy Study Of Hydrogenated Amorphous Silicon, Nancy Burnham, Rf Fisher, Se Se, Ll Kazmerski
Electron Energy‐Loss Spectroscopy Study Of Hydrogenated Amorphous Silicon, Nancy Burnham, Rf Fisher, Se Se, Ll Kazmerski
Nancy A. Burnham
Electron energy‐loss spectroscopy is used to study hydrogenated amorphous silicon (a‐Si:H). Core‐level and plasma excitations were examined as a function of hydrogen content. This technique and its interpretation reveals a consistent picture of the electron excitations within this important material. The a‐Si:H thin films were fabricated by rf sputtering. Their hydrogen concentrations ranged from 0% to 15%. Hydrogen content was determined by infrared spectroscopy and secondary ion mass spectroscopy. X‐ray photoelectron spectroscopy and inspection of the silicon Auger‐K L L peak confirmed the silicon core levels.