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Amorphous semiconductors， Electron spectroscopy， Silicon ，Infrared spectroscopy，Photoelectron spectroscopy
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Electron Energy‐Loss Spectroscopy Study Of Hydrogenated Amorphous Silicon, Nancy Burnham, Rf Fisher, Se Se, Ll Kazmerski
Electron Energy‐Loss Spectroscopy Study Of Hydrogenated Amorphous Silicon, Nancy Burnham, Rf Fisher, Se Se, Ll Kazmerski
Nancy A. Burnham
Electron energy‐loss spectroscopy is used to study hydrogenated amorphous silicon (a‐Si:H). Core‐level and plasma excitations were examined as a function of hydrogen content. This technique and its interpretation reveals a consistent picture of the electron excitations within this important material. The a‐Si:H thin films were fabricated by rf sputtering. Their hydrogen concentrations ranged from 0% to 15%. Hydrogen content was determined by infrared spectroscopy and secondary ion mass spectroscopy. X‐ray photoelectron spectroscopy and inspection of the silicon Auger‐K L L peak confirmed the silicon core levels.