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Effect Of Gallium Doping And Ball Milling Process On The Thermoelectric Performance Of N-Type Zno, Priyanka Jood, Germanas Peleckis, Xiaolin Wang, S X. Dou
Effect Of Gallium Doping And Ball Milling Process On The Thermoelectric Performance Of N-Type Zno, Priyanka Jood, Germanas Peleckis, Xiaolin Wang, S X. Dou
Shi Xue Dou
We report a systematic investigation of the thermoelectric properties of n-type Ga-doped ZnO synthesized using different ball milling conditions. Samples fabricated by the high-energy ball milling resulted in a highly dense layered structure with randomly distributed voids. These samples measured the lowest room temperature thermal conductivity, i.e., 27 W/mK due to increased phonon scattering. Furthermore, the Ga:ZnO system showed a metal–semiconductor transition above 300 K with transition temperature decreasing with increasing doping level. Measurement of the activation energy revealed the presence of one donor level around 3.9–7.8 meV and a deeper donor level around 15.4–18.1 meV below the conduction band …