Engineering Commons^™

Measuring Nonlinear Properties Of Graphene Thin Films Using Z-Scan Technique, Thekrayat Hassan Al Abdulaal

Graduate Theses and Dissertations

The nonlinear studies of two-dimensional (2D) nanomaterials, specifically graphene, are very significant since graphene is finding its usefulness in handling the enormous heat in nanoscale high-density power electronics. Graphene has emerged to be a promising nanomaterial as an excellent heat spreader due to its high thermal conductivity. However, the experimental nonlinear study of graphene materials and their application in developing future optoelectronic devices demands for more developed research.

The research objective is first to build a precise, and sensitive technique to investigate and understand the thermal nonlinear properties, including nonlinear refractive index (n2), nonlinear absorption coefficient (β), and thermo-optic coefficient …

Preparation And Characterization Of Van Der Waals Heterostructures, Horacio Coy Diaz

USF Tampa Graduate Theses and Dissertations

In this dissertation different van der Waals heterostructures such as graphene-MoS₂ and MoTe₂-MoS₂ were prepared and characterized. In the first heterostructure, polycrystalline graphene was synthesized by chemical vapor deposition and transferred on top of MoS₂ single crystal. In the second heterostructure, MoTe₂ monolayers were deposited on MoS₂ by molecular beam epitaxy.

Characterization of graphene-MoS₂ heterostructures was conducted by spin and angle resolve spectroscopy which showed that the electronic structure of the bulk MoS₂ and graphene in this van der Waals heterostructures is modified. For MoS₂ underneath the graphene, a band …

Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri

Legacy Theses & Dissertations (2009 - 2024)

The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …