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Full-Text Articles in Engineering
Communication-Theoretic Foundations For Optical Receivers Using Dynamically Biased Avalanche Photodiodes, Georges El-Howayek
Communication-Theoretic Foundations For Optical Receivers Using Dynamically Biased Avalanche Photodiodes, Georges El-Howayek
Electrical and Computer Engineering ETDs
To meet the demands of the exponential growth in video, voice, data and mobile device traffic over the internet, the telecommunication industry has been moving toward higher speed protocols such as 40-Gb/s and 100-Gb/s. Operations at such high speeds require detectors with optimized internal gain (leading to high sensitivity) to reduce cost. Avalanche photodiodes (APDs) are commonly used photodetectors in many high-speed optical receivers due to their internal optoelectronic gain, which allows the photogenerated current to dominate the thermal noise without the need for optical pre-amplification of the received optical signal. However, the long avalanche buildup time associated with APDs, …
Thin 3d Multiplication Regions In Plasmonically Enhanced Nanopillar Avalanche Detectors, Pradeep Senanayake, Chung-Hong Hung, Alan C. Farrell, David A. Ramirez, Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, Diana L. Huffaker
Thin 3d Multiplication Regions In Plasmonically Enhanced Nanopillar Avalanche Detectors, Pradeep Senanayake, Chung-Hong Hung, Alan C. Farrell, David A. Ramirez, Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, Diana L. Huffaker
Electrical and Computer Engineering Faculty Research and Publications
We demonstrate a nanopillar (NP) device structure for implementing plasmonically enhanced avalanche photodetector arrays with thin avalanche volumes (∼ 310 nm × 150 nm × 150 nm). A localized 3D electric field due to a core–shell PN junction in a NP acts as a multiplication region, while efficient light absorption takes place via surface plasmon polariton Bloch wave (SPP-BW) modes due to a self-aligned metal nanohole lattice. Avalanche gains of ∼216 at 730 nm at −12 V are obtained. We show through capacitance–voltage characterization, temperature-dependent breakdown measurements, and detailed device modeling that the avalanche region is on the order of …
A New Approach For Computing The Bandwidth Statistics Of Avalanche Photodiodes, Majeed M. Hayat, Guoquan Dong
A New Approach For Computing The Bandwidth Statistics Of Avalanche Photodiodes, Majeed M. Hayat, Guoquan Dong
Electrical and Computer Engineering Faculty Research and Publications
A new approach for characterizing the avalanche-buildup-time-limited bandwidth of avalanche photodiodes (APDs) is introduced which relies on the direct knowledge of the statistics of the random response time. The random response time is the actual duration of the APD’s finite buildup-limited random impulse response function. A theory is developed characterizing the probability distribution function (PDF) of the random response time. Recurrence equations are derived and numerically solved to yield the PDF of the random response time. The PDF is then used to compute the mean and the standard deviation of the bandwidth. The dependence of the mean and the standard …