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Reaction Method Control Of Impurity Scattering In C-Doped Mgb2: Proving The Role Of Defects Besides C Substitution Level, S K. Chen, K Y. Tan, A S. Halim, X Xu, K S. B De Silva, W K. Yeoh, S X. Dou, A Kursumovic, J L. Macmanus-Driscoll
Reaction Method Control Of Impurity Scattering In C-Doped Mgb2: Proving The Role Of Defects Besides C Substitution Level, S K. Chen, K Y. Tan, A S. Halim, X Xu, K S. B De Silva, W K. Yeoh, S X. Dou, A Kursumovic, J L. Macmanus-Driscoll
Shi Xue Dou
In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, pA(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrain scattering because of the simultaneous reaction between Mg and SiC and carbon substitution during the formation of MgB2. In addition, because of the cleaner reaction route for the SiC reacted samples, the calculated active area …