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Full-Text Articles in Engineering
Preparation And Characterization Of Silicon From Rice Hulls, E Swatsitang, M Krochai
Preparation And Characterization Of Silicon From Rice Hulls, E Swatsitang, M Krochai
Journal of Metals, Materials and Minerals
High purity silica can be prepared by reflux raw rice hulls in 1 N HCl for 45 minutes first, then pyrolyzed at 650°C for 3 hours in O2 atmosphere. The obtained white ash was examined by XRD showing a broad peak of amorphous silica at 2 theta = 22 degree. Silicon can be prepared by metallothermal reduction of pure silica at 650°C in Ar atmosphere for 1-3 hours, using magnesium (99% purity) as a reducing agent. High purity silicon (99.98 %) can be obtained by subsequently washing the as-reduced silica with HCl: H2O and HF: H2O solutions. The results from …
Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang
Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang
Journal of Electrochemistry
The SiNWs electrodes were fabricated by coating and direct growth methods,respectively.The structure,morphology and electrochemical performance of such materials were characterized by XRD,SEM and charge-discharge tests.The results show that the electrodes prepared by direct growth method had higher capacity,better battery life and also displayed and excellent cyclability at higher currents.During the process of lithiation,the initial crystalline Si transformed to amorphous LixSi,and the average diameter of the SiNWs increased.Despite the large volume changed,the SiNWs remained intact and did not break into smaller particles.
Photodiode Development For Fluorescence Spectroscopy Applications, Jeremy Goodman
Photodiode Development For Fluorescence Spectroscopy Applications, Jeremy Goodman
Journal of the Microelectronic Engineering Conference
Two photodiode architectures were designed, built, and tested for comparison for implementation into a fluorescence spectroscopy, or fluorometric, system. All devices were fabricated on 4-inch, N-type silicon substrates. The photodiodes presented were tested for responsivity and response time, two main factors judging effective incorporation in fluorometric applications. The planar photodiode excels in responsivity due to the device’s large active-area; however, high junction capacitance greatly hinders the response time. The lateral photodiode had much lower junction capacitance than the planar, but exhibited lesser responsivity due to the decreased active area size. The lateral photodiode was chosen as a candidate for timeresolved …
Low Temperature Junction Formation In Silicon, Andrew Mccable
Low Temperature Junction Formation In Silicon, Andrew Mccable
Journal of the Microelectronic Engineering Conference
The goal of this project was to examine the low temperature formation of silicon P-N junctions on SOl substrates. P+N and N+P diodes were fabricated with several different dopants at various implant doses. The effects of the silicon thickness were also examined. Existing theories of low temperature phosphorous solid-phase epitaxy (SPE) were verified through this study.