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Articles 1 - 27 of 27
Full-Text Articles in Engineering
Numerical Calculation Of The Charge State And Electrostatic Potential Of A Binary Nanocluster Structure With Si2zns Cells In A Cubic Lattice Of Crystalline Silicon With A Diamond Structure, N.F. Zikrillaev, F.Q. Shakarov, M. K. Khaqqulov
Numerical Calculation Of The Charge State And Electrostatic Potential Of A Binary Nanocluster Structure With Si2zns Cells In A Cubic Lattice Of Crystalline Silicon With A Diamond Structure, N.F. Zikrillaev, F.Q. Shakarov, M. K. Khaqqulov
Technical science and innovation
Numerical calculation of electronic and atomic structures of complex systems of crystalline and transitional nano- and micro-sizes by using quantum physical methods will make it possible to forecast new properties of crystalline silicon with various concentrations of clusters of impurity atoms, structural arrangement at lattice sites and types of clusters. The quantum-chemical method was used to calculate the required characteristics of the cell, i.e. the charge state and electrostatic potential for the base matrix of Si (silicon) and silicon with an impurity cluster consisting of 3 tetrahedral cells type- Si2ZnS in the base lattice of Si. Calculation of …
Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov
Conductivity Reversal In Silicon Doped With S And Zn, Abdulaziz Shavkatovich Mavlyanov, Nurullo Zikrillayev, Maruf Khaqqulov, Erkin Khaltursunov, Farhod Shakarov
Acta of Turin Polytechnic University in Tashkent
Based on experimental results of investigation of type of conductivity of silicon samples doped with sulfur at Т=1250°С, and thereafter with zinc at T=1200°С, the authors put forward the hypothesis about self-assembly of “binary” elementary cells where atoms of elements of group II (Zn) and IV (S) allegedly form ZnS-type compounds in Si. The thermodynamic conditions required for buildup of such elementary cells and assembly of various associations in the basic lattice of silicon including self-assembly of ZnS clusters were theoretically determined and experimentally justified.
Optimal Technological Modes Of Ion Implantation And Following Annealing For Forming Thin Nanosized Films Of Silicides, A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Optimal Technological Modes Of Ion Implantation And Following Annealing For Forming Thin Nanosized Films Of Silicides, A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Eurasian Journal of Physics and Functional Materials
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Eurasian Journal of Physics and Functional Materials
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.
Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin
Obtaining Homogeneous Silicon In The Process Of Alumothermic Reduction Of Silicon Dioxide, G. N. Chumikov, V. V. Klimenov, N. S. Tokmoldin, S. Zh. Tokmoldin
Eurasian Journal of Physics and Functional Materials
The influence of charge components on emergence of a homogeneous phase of silicon in the process of silicon dioxide reduction by aluminium has been studied. Optimal process parameters affecting the quality of the end product have been identified. These include the ratio of components of the synthetic charge (CaO, SiO2 , CaF2 ), the optimal amount of SiO2 , the optimal amount of a reducing agent (Al) and the optimal Si/slag ratio. The homogeneous phase of silicon is easily separated from the slag, which contributes to the reduction of waste silicon during further technological operations.
Influence Of Heat Treatment On The Behaviorof Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Influence Of Heat Treatment On The Behaviorof Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Euroasian Journal of Semiconductors Science and Engineering
By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Euroasian Journal of Semiconductors Science and Engineering
The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.
Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev
Influence Of Impurities Of Refractory Elements On The Inefficiency Of Charge Transfer In Charged Communication Devices, Abdugafur T. Mamadalimov, Shakhrukh Kh. Daliev
Euroasian Journal of Semiconductors Science and Engineering
The influence of impurities of refractory elements on the inefficiency of charge transfer in charge-coupled devices is investigated. Found that the magnitude of the inefficiency of transfer directly proportional to the density of surface States and the density of surface States in the CCD registers, with the resulting n losses n ≤ 0.1 depends on the type specially introduced impurities. It is shown that in CCD structures doped with impurities Ti, Zr and Hf relative to the control structures, the charge loss is greater, and in doped with impurities W and Mo, the charge loss is less.
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Euroasian Journal of Semiconductors Science and Engineering
It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.
Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Influence Of Heat Treatment On The Behavior Of Deep Levels In Silicon Doped By Tungsten, Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, Anifa D. Paluanova
Euroasian Journal of Semiconductors Science and Engineering
By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Infrared Spectroscopy Of Silicon Doped By Stannum And Manganese, Sharifa B. Utamuradova, Ravshanbek M. Ergashev, Khusniddin J. Matchanov
Euroasian Journal of Semiconductors Science and Engineering
The processes of defect formation in silicon doped by tin and manganese and their interaction with uncontrolled impurities were studied by infrared spectroscopy.It was found that the presence of impurities of transition and isovalent elements leads to a technological decrease in the concentration of process impurities – oxygen and carbon. It was found that the introduction of manganese in Si leads to a strong decrease in the concentration of interstitial optically active oxygen Noopt: in rapidly cooled samples Si there is a decrease of Noopt by 50% compared to the original Si.
Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev
Capacitive Spectroscopy Of Defects In Semiconductors, Doped By Atoms Of Gadolinium, Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, Uktam K. Erugliev
Euroasian Journal of Semiconductors Science and Engineering
The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Journal of the Microelectronic Engineering Conference
No abstract provided.
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Journal of the Microelectronic Engineering Conference
The goal of this analysis is to scale aluminum oxide films deposited by ALD for use in transistor fabrication with silicon and silicon-germanium substrates and the two metals offer varying work functions for gate control on the transistor level. MOS capacitors were fabricated on six-inch silicon substrates consisting of aluminum-oxide (Al2O3) as the dielectric and aluminum as the gate metal. The Al2O3 was deposited using atomic layer deposition (ALD) with thicknesses of 15nm and 20nm, while the aluminum gate metal was DC sputter deposited containing thickness of approximately 1200 A° . Capacitance values were measured in order to back-calculate the …
Quality Improvement In Drilling Silicon By Using Micro Laser Assisted Drilling, Barkin Bakir
Quality Improvement In Drilling Silicon By Using Micro Laser Assisted Drilling, Barkin Bakir
The Hilltop Review
The micro-laser assisted drilling (µ-LAD) of monocrystalline silicon (100), using a diamond cutting tool coupled with a laser, was tested in order to improve the cutting edge quality of a drilled samples. The laser beam is transmitted through an optically transparent diamond drill bit and focused precisely at the tool-workpiece interface, where the material is under high pressure induced by the diamond tool. The influence of the laser power on the quality and the inner surface finish of the drilled materials is investigated. Different laser powers were used to carry out the experiments. The experimental results indicated that the µ-LAD …
Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe
Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe
Makara Journal of Technology
As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between …
Synthesis And Electrochemical Performance Of Si/C Composite Modified By Pani, Guang-Hui Zhang, Pei-Kang Shen, Ge Sang, Ren-Jin Xiong
Synthesis And Electrochemical Performance Of Si/C Composite Modified By Pani, Guang-Hui Zhang, Pei-Kang Shen, Ge Sang, Ren-Jin Xiong
Journal of Electrochemistry
Silicon/carbon (Si/C) composite materials were prepared through high-energy ball milling and high-temperature solid-phase method, and then coated with thin polyaniline (PAni) film by oxidation. The microstructure and component of the composites were characterized by SEM, XRD, IR, TG, and the electrochemical performance was investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results showed that the surface of PAni/Si/G/C composite was coating with complete lamellar structure of PAni film. Its reversible capacity was 784 mAh.g-1and 690 mAh.g-1 could be maintained after 50th charge-discharge cycles.
Preparation And Performance Of Carbon-Coated Si/C Composites, Li-Li Du, Quan-Chao Zhuang, Tao Wei, Yong-Li Cui, Zhi Sun, Shi-Gang Sun
Preparation And Performance Of Carbon-Coated Si/C Composites, Li-Li Du, Quan-Chao Zhuang, Tao Wei, Yong-Li Cui, Zhi Sun, Shi-Gang Sun
Journal of Electrochemistry
Si/C composite for lithium ion batteries was obtained by pyrolyzing and ball-milling. The microstructure and component of the composite was characterized by SEM and XRD, the electrochemical performance was investigated by electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and galvano static charge-discharge tests. The results illustrate that the particle of Si/C composite prepared by pyrolysis exhibits inerratic morphology, uniform carbon-coating layer, good electrical conductivity, low resistance. The first intercalated-lithium capacity of the composite material is 4495 mAh/g; the first coulomb efficiency is 65.3%. From the second week the coulomb efficiency maintains 97%, and the capacity at the 100th cycle can …
Investigating The Coefficient Of Thermal Expansion Of Pecvd Teos Sio2 On Silicon, Justin Delmonte
Investigating The Coefficient Of Thermal Expansion Of Pecvd Teos Sio2 On Silicon, Justin Delmonte
Journal of the Microelectronic Engineering Conference
The goal of the experiment was to determine the coefficient of thermal expansion for PECVD TEOS on SiO2 on silicon using surface machined MEMS. Two different devices were used to investigate the property along with an available environmental chamber and an optical interferomeler. One device yielded no results and the other device needs tuning to yield more accurate results. The investigation as a whole proved that the methodology works should devices be obtained or fabricated that could measure what is necessary to calculate the coefficients accurately.
Preparation And Characterization Of Silicon From Rice Hulls, E Swatsitang, M Krochai
Preparation And Characterization Of Silicon From Rice Hulls, E Swatsitang, M Krochai
Journal of Metals, Materials and Minerals
High purity silica can be prepared by reflux raw rice hulls in 1 N HCl for 45 minutes first, then pyrolyzed at 650°C for 3 hours in O2 atmosphere. The obtained white ash was examined by XRD showing a broad peak of amorphous silica at 2 theta = 22 degree. Silicon can be prepared by metallothermal reduction of pure silica at 650°C in Ar atmosphere for 1-3 hours, using magnesium (99% purity) as a reducing agent. High purity silicon (99.98 %) can be obtained by subsequently washing the as-reduced silica with HCl: H2O and HF: H2O solutions. The results from …
Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang
Silicon Nanowires As Anode Materials For Lithium Ion Batteries, Yan-Peng Fu, Hui-Xin Chen, Yong Yang
Journal of Electrochemistry
The SiNWs electrodes were fabricated by coating and direct growth methods,respectively.The structure,morphology and electrochemical performance of such materials were characterized by XRD,SEM and charge-discharge tests.The results show that the electrodes prepared by direct growth method had higher capacity,better battery life and also displayed and excellent cyclability at higher currents.During the process of lithiation,the initial crystalline Si transformed to amorphous LixSi,and the average diameter of the SiNWs increased.Despite the large volume changed,the SiNWs remained intact and did not break into smaller particles.
Photodiode Development For Fluorescence Spectroscopy Applications, Jeremy Goodman
Photodiode Development For Fluorescence Spectroscopy Applications, Jeremy Goodman
Journal of the Microelectronic Engineering Conference
Two photodiode architectures were designed, built, and tested for comparison for implementation into a fluorescence spectroscopy, or fluorometric, system. All devices were fabricated on 4-inch, N-type silicon substrates. The photodiodes presented were tested for responsivity and response time, two main factors judging effective incorporation in fluorometric applications. The planar photodiode excels in responsivity due to the device’s large active-area; however, high junction capacitance greatly hinders the response time. The lateral photodiode had much lower junction capacitance than the planar, but exhibited lesser responsivity due to the decreased active area size. The lateral photodiode was chosen as a candidate for timeresolved …
Low Temperature Junction Formation In Silicon, Andrew Mccable
Low Temperature Junction Formation In Silicon, Andrew Mccable
Journal of the Microelectronic Engineering Conference
The goal of this project was to examine the low temperature formation of silicon P-N junctions on SOl substrates. P+N and N+P diodes were fabricated with several different dopants at various implant doses. The effects of the silicon thickness were also examined. Existing theories of low temperature phosphorous solid-phase epitaxy (SPE) were verified through this study.
Electrochemistry And Structures Of Silicon Surface, Gregory X.Zhang
Electrochemistry And Structures Of Silicon Surface, Gregory X.Zhang
Journal of Electrochemistry
Accurate control and fabrication of silicon surface structures from atomic scale to micrometer scale,which may be randomly associated with surface roughness or have well defined patterns,is critical for the per-formance and reliability of electronic devices.Electrochemical reactions of silicon in solutions involved in wetcleaning and etching of silicon wafer play an importantrole in determining the structures of silicon surface.Atre-mendous amount of researches have been done in the last several decades to understand and control a range ofcomplex electrochemical reactions at silicon/solution interface and their relations to the resulted surface struc-tures.The findings generated from these research efforts have been compiled and integrated …
Multilevel Metalization, Michael J. Bailey
Multilevel Metalization, Michael J. Bailey
Journal of the Microelectronic Engineering Conference
A bilevel metallization process using aluminum with 1~ silicon for the Metal 1 layer, pure aluminum for the Metal 2 layer, and Accuglass X-11 311 Series spin-on glass for the interlevel dielectric was investigated. Problems encountered in via etching with previous bilevel work were eliminated by using a modified buffered HF etchant. Vias down to 6x6um in size were found to conduct and have resistances less than 1 Ohm. Spin-on glass coating processes, however, were still in need of refinement, as numerous pinholes were observed over the aluminum regions.
The Effects Of Premetalization Clean On Electromigration In Al-Si Thin Films On Si02 And Polysilicon Substrates, Peter R. Stubler
The Effects Of Premetalization Clean On Electromigration In Al-Si Thin Films On Si02 And Polysilicon Substrates, Peter R. Stubler
Journal of the Microelectronic Engineering Conference
The effects of premetalization cleaning on electromigration in Al-Si thin films was studied. Premetalization cleaning, divided into a standard RCA clean, DC glow discharge plasma clean, and no clean, were performed on oxide and polysilicon substrates Test structures were subjected to high current densities of 10e6 A/cm2 and monitored for changes in current resulting from electromigration induced defects. The test station employed in this experiment was subject to current losses which the 5Oftware erroneously interpreted as electromigration failures, thus completing the test.
Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters
Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters
Journal of the Microelectronic Engineering Conference
A localized oxidation of silicon (LOCOS) process was investigated using nitrogen ion implantation. The doses of 2E12, 2E13, 2E14, and 1E15 atoms/cm2 were implanted through a photoresist mask using the Varian/Extrion 40-100 ion implanter. The results show the initial formation of a LOCOS oxidation. The localized image faded on extended oxidation which indicates the implanted region did not adequately inhibit the diffusion of oxygen.