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Articles 1 - 6 of 6
Full-Text Articles in Engineering
Electrodeposition Of Copper Into Trenches Under Rotating Hydrodynamic Condition, Jian-Jun Sun
Electrodeposition Of Copper Into Trenches Under Rotating Hydrodynamic Condition, Jian-Jun Sun
Journal of Electrochemistry
Silicon chips patterned with treneches were fixed onto a rotating electrode. Copper was electrodeposited into the trenches under rotating hydrodynamic conditions The sizes of the trenches are 1 m in height and 0.35 m, 0.50 m and 0.70 m in width, respectively. The effects of rotating of the chip, the current density and the concentration of Cu~(2+ )on the filling of thetrenches were studied. It is found that lower current density and moderate concentration of Cu~(2+)resulted in a void free filling of the trenches.
Face-To-Face Die Bonding And Direct Interconnects, Jeffrey A. Steinfeldt
Face-To-Face Die Bonding And Direct Interconnects, Jeffrey A. Steinfeldt
Journal of the Microelectronic Engineering Conference
In this investigation and process development project, a novel method for directly connecting two computer chips together, both electrically and physically was developed. This process utilized several processes and materials that are already used in semiconductor manufacturing and packaging. By using these common materials and processes, it simplifies the implementation of the process, and removes several potential roadblocks. It was found that two chips could successfully be bonded together physically and connected electrically.
Interaction Effects Of Slurry Chemistry On Chemical Mechanical Planarization Of Electroplated Copper, Peter A. Miranda, Jerome A. Imonigie, Amy J. Moll
Interaction Effects Of Slurry Chemistry On Chemical Mechanical Planarization Of Electroplated Copper, Peter A. Miranda, Jerome A. Imonigie, Amy J. Moll
Electrical and Computer Engineering Faculty Publications and Presentations
Recent studies have been conducted investigating the effects of slurry chemistry on the copper CMP process. Slurry pH and hydrogen peroxide concentration are two important variables that must be carefully formulated in order to achieve desired removal rates and uniformity. In applications such as throughwafer vertical interconnects, slurry chemistry effects must be thoroughly understood when copper plating thicknesses can measure up to 20 microns thick. The species of copper present on the surface of the wafer can be controlled through formulation of the slurry chemistry resulting in minimizing non-uniformity while aggressively removing copper. Using a design of experiments (DOE) approach, …
Copper Sorption Mechanisms On Smectites, Daniel G. Strawn, Noel E. Palmer, Luca J. Furnare, Carmen Goodell, James E. Amonette, Ravi K. Kukkadapu
Copper Sorption Mechanisms On Smectites, Daniel G. Strawn, Noel E. Palmer, Luca J. Furnare, Carmen Goodell, James E. Amonette, Ravi K. Kukkadapu
US Department of Energy Publications
Due to the importance of clay minerals in metal sorption, many studies have attempted to derive mechanistic models that describe adsorption processes. These models often include several different types of adsorption sites, including permanent charge sites and silanol and aluminol functional groups on the edges of clay minerals. To provide a basis for development of adsorption models it is critical that molecular-level studies be done to characterize sorption processes. In this study we conducted X-ray absorption fine structure (XAFS) and electron paramagnetic resonance (EPR) spectroscopic experiments on copper (II) sorbed on smectite clays using suspension pH and ionic strength as …
Surface Chemistry Of Application Specific Pads And Copper Chemical Mechanical Planarization, Sameer Arun Deshpande
Surface Chemistry Of Application Specific Pads And Copper Chemical Mechanical Planarization, Sameer Arun Deshpande
Electronic Theses and Dissertations
Advances in the interconnection technology have played a key role in the continued improvement of the integrated circuit (IC) density, performance and cost. Copper (Cu) metallization, dual damascenes processing and integration of copper with low dielectric constant material are key issues in the IC industries. Chemical mechanical planarization of copper (CuCMP) has emerged as an important process for the manufacturing of ICs. Usually, Cu-CMP process consists of several steps such as the removal of surface layer by mechanical action of the pad and the abrasive particles, the dissolution of the abraded particles in the CMP solution, and the protection of …
Slurry Chemistry Effects On Copper Chemical Mechanical Planarization, Ying Luo
Slurry Chemistry Effects On Copper Chemical Mechanical Planarization, Ying Luo
Electronic Theses and Dissertations
Chemical-mechanical Planarization (CMP) has emerged as one of the fastest-growing processes in the semiconductor manufacturing industry, and it is expected to show equally explosive growth in the future (Braun, 2001). The development of CMP has been fueled by the introduction of copper interconnects in microelectronic devices. Other novel applications of CMP include the fabrications of microelectromechanical systems (MEMS), advanced displays, three dimensional systems, and so on (Evans, 2002). CMP is expected to play a key role in the next-generation micro- and nanofabrication technologies (Singh, et al., 2002). Despite the rapid increase in CMP applications, the fundamental understanding of the CMP …