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2004

Rochester Institute of Technology

Articles 1 - 19 of 19

Full-Text Articles in Engineering

Metal Source/Drain Schottky Field Effect Transistors - A Proof Of Concept, Reinaldo A. Vega Jan 2004

Metal Source/Drain Schottky Field Effect Transistors - A Proof Of Concept, Reinaldo A. Vega

Journal of the Microelectronic Engineering Conference

Field effect transistors, in which the sources and drains are made of metal (aluminum), as opposed to silicon, have been conceived, designed, fabricated, and tested. For the n body device, maximum Jon was found to be 74.69μA/μm after a “burn-in” process was performed. For 1V to 10V drain bias, extracted Vtsat values varied between 2.3V and 6.SV, gm between 0.002 and 341μS, sub-Vt slope between 111 and 706mV/dec, and Ion:Ioff between 1.11 and 3.99 decades. The Schottky barrier height was found to be 0.503eV. Additionally, full CMOS operation using one metal for both NFET and PFET operation is proposed and …

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Design And Fabrication Of Tri-Gated Finfet, Mohammed R. Rahman Jan 2004

Design And Fabrication Of Tri-Gated Finfet, Mohammed R. Rahman

Journal of the Microelectronic Engineering Conference

A Tn Gated Fin Field Effect Transistor is on of the many novel devices that may be replacing planar MOSFETs, by reducing short channel effects. The FinFET has emerged as one of the most promising double gate structures primarily because of its ease of manufacturing. There are still significant challenges to overcome it in order to make the process available commercially. The Tri-Gated FinFET is tri-gated meaning that the gate overlaps the top and the two sides of the FIN. Three dimensionally the gate depletes three surfaces of the FIN, which results in a higher drive current relative to a …

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Development Of Thin Gate Oxides For Advanced Cmos Applications, Bryant Mann Jan 2004

Development Of Thin Gate Oxides For Advanced Cmos Applications, Bryant Mann

Journal of the Microelectronic Engineering Conference

A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitridation was a two step process involving variations of nitrous oxide and oxygen thermal soak times. The investigation of oxynitride gate dielectric was carried out through the fabrication of MOS capacitors. Thickness measurements were obtained using VASE ellipsometry and CV analysis was performed to test the electrical integrity of the dielectric. The CV analysis resulted in high frequency curves that displayed a low frequency response due to minority charge.

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Capacitance-Voltage Analysis Of High-? Dielectric On Strained Silicon, Mike Latham Jan 2004

Capacitance-Voltage Analysis Of High-? Dielectric On Strained Silicon, Mike Latham

Journal of the Microelectronic Engineering Conference

Device characteristics are reported on Hf02 gate dielectrics deposited by atomic layer deposition (ALD), and jet vapor deposition (JVD) on strained-Si and bulk Si samples. Capacitance-Voltage (CV) analysis of samples shows comparable interface charge levels between strained-Si and bulk Si samples. A flat band shift of -0.5V was noted between the strained-Si and bulk Si for the JVD samples.

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Work Function Engineering With Molybdenum And Molybdenum-Nitride Gate Pmos, Valarie Welsh Jan 2004

Work Function Engineering With Molybdenum And Molybdenum-Nitride Gate Pmos, Valarie Welsh

Journal of the Microelectronic Engineering Conference

The motivation for the creation of PIT metal gate PMOS process transistors was to investigate and prove the work function of molybdenum can be changed through reactive sputtering and thermal processing. The existing PIT metal gate PMOS process was adapted to form Molybdenum and Molybdenum-Nitride PMOS transistors. Processing of the molybdenum films affected the final composition of the gate electrode and ultimately its work function. Through theoretical and real analysis, the work functions of Mo and MoN gates were extracted and compared with one another as well as to Al. Examination of the extracted work functions revealed the presence of …

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Phosphoric Acid As A High-Index Immersion Fluid, Karen R. Wolf Jan 2004

Phosphoric Acid As A High-Index Immersion Fluid, Karen R. Wolf

Journal of the Microelectronic Engineering Conference

A study has been performed to determine the viability of phosphoric acid as a high-index fluid for immersion lithography. The ability to image in the immersion fluid, and the compatibility of the fluid with photoresist were examined. Samples were soaked in the fluid before and after exposure in water to demonstrate no significant damage to the imaging capability of the resist. The refractive index of photoresist samples soaked in various immersion fluids was measured with a variable angle spectroscopic ellipsometer (VASE), and results did not show a significant variation from photoresist that was not soaked. Sixty-eight nanometer lines were imaged …

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Quadrupole Illumination Design For A 193nm Hyper-Na Exitech Immersion Stepper, Derek J. Summers Jan 2004

Quadrupole Illumination Design For A 193nm Hyper-Na Exitech Immersion Stepper, Derek J. Summers

Journal of the Microelectronic Engineering Conference

As device sizes reduce in size and processes become more complex, enhancement techniques for optical lithography are essential. Several ways to enhance the current lithographic systems include immersion lithography, phaseshifting masks, optical proximity correction and OAT (off-axis illumination). Depending on the process, these RETs (resolution enhancement techniques) may be used individually or in combination to compensate for image degradation caused by optical diffraction and resist behavior. The purpose of this project is to design and test a quadrupole off-axis illumination aperture for the 193 nm Immersion stepper at RIT. Process window simulations, using Prolith, were used to determine theoretical effectiveness …

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Development Of A Full Silicidation (Fusi) Process For Nickel Silicide, Yaser A. Alshehri Jan 2004

Development Of A Full Silicidation (Fusi) Process For Nickel Silicide, Yaser A. Alshehri

Journal of the Microelectronic Engineering Conference

Suicides have been long used to solve the problem of poly depletion effects in the CMOS circuits. The depletion layer in the poly-gates increases the total effective gate-dielectric thickness causing a poor device performance. Many advantages are promised in replacing the Polysilicon gates with metal gates, which include improved sheet resistance of the gates, decreased equivalent electrical thickness of gate dielectric by eliminating the Polysilicon gate depletion effect, and dual work functions, higher than n+ poly work function for NMOS and lower than p+ poly for PMOS in a single full Silicidation (FUSI) of Polysilicon gates. In the ever reducing …

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Implementation Of Backside Vias As An Alternative To Wafer Thinning, Michael E. Hathorn Jan 2004

Implementation Of Backside Vias As An Alternative To Wafer Thinning, Michael E. Hathorn

Journal of the Microelectronic Engineering Conference

A study has been performed to determine the viability of Potassium hydroxide (KOH) as a wet etchant to create backside vias to devices previously manufactured on thinned wafers. In order to protect frontside devices in the back end of line process, the KOH must not come in contact with the front of the wafer. A number of methods have been investigated with the advantage being in the use of a coat of black wax. This paper will present results obtained from tests with black wax as well as provide insight to the advantages and disadvantages of other protection options.

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Face-To-Face Die Bonding And Direct Interconnects, Jeffrey A. Steinfeldt Jan 2004

Face-To-Face Die Bonding And Direct Interconnects, Jeffrey A. Steinfeldt

Journal of the Microelectronic Engineering Conference

In this investigation and process development project, a novel method for directly connecting two computer chips together, both electrically and physically was developed. This process utilized several processes and materials that are already used in semiconductor manufacturing and packaging. By using these common materials and processes, it simplifies the implementation of the process, and removes several potential roadblocks. It was found that two chips could successfully be bonded together physically and connected electrically.

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Silica Waveguide Design And Fabrication Using Integrated Optics: A Link To Optical Vlsi Photonics Integration For Semiconductor Technology, Anthony G. Navarro Jan 2004

Silica Waveguide Design And Fabrication Using Integrated Optics: A Link To Optical Vlsi Photonics Integration For Semiconductor Technology, Anthony G. Navarro

Journal of the Microelectronic Engineering Conference

The hardmask NiCr, has shown to be the optimum alloy in reducing sidewall roughness (SWR) in planar waveguide geometries. Within this study, the NiCr hardmask has been demonstrated using a lift-off of NiCr. In comparison, a NiCr etchant from TranseneT~t is used to compare how well sidewall roughness is reduced, and how the RIE - CHF3/O2 gas mixture improved anisotropy. From the results obtained, NiCr is a robust material that reduces sidewall roughness, and is the best metal to use, with the least amount of transferred striations. The CHF3/CF4 gas mixture in the AME …

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Investigation And Development Of Air Bridges, Jay Cabacungan Jan 2004

Investigation And Development Of Air Bridges, Jay Cabacungan

Journal of the Microelectronic Engineering Conference

A study was done in order to develop a fabrication process for creating air bridges at RIT’s Semiconductor and Microsystems Fabrication Laboratory (SMFL). Process development looked at three key factors (i) a robust lithography process that would produce the necessary rounded profile for fabricating air bridges (ii) sputter deposition vs. evaporation as metal deposition techniques (iii) the strength of the structures by testing the maximum distance an air bridge could span, the minimum and maximum thickness the structure could support, and the dimensions of the support posts. Several samples were fabricated testing the three different factors studied and SEM micrographs …

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Design And Fabrication Of A Micro-Size Thermionic Ionization/Flame Ionization Detector For Gas Phase Chemical Analytes, Robert Manley Jan 2004

Design And Fabrication Of A Micro-Size Thermionic Ionization/Flame Ionization Detector For Gas Phase Chemical Analytes, Robert Manley

Journal of the Microelectronic Engineering Conference

A simple, MEMS base micro-chemical detector utilizing the principles of gas ionization, has been designed and fabricated. The device contains a polysilicon micro air-bridge heater structure with integrated polysilicon electrodes. The design of the devices allows it not only functions via thermionic emission, but also via chemi-ionization if a proper Pt catalyst is applied and it is operated in an environment containing hydrogen. When properly biased the device has been shown to heat to high temperatures where thermionic emission can begin to occur. Hydrocarbon chemicals in the gas phase have shown to ionize, via thermionic ionization and have been collected, …

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Fabrication And Characterization Of A Packaged Mems Gas Flow Sensor, Vee Chee Hwang Jan 2004

Fabrication And Characterization Of A Packaged Mems Gas Flow Sensor, Vee Chee Hwang

Journal of the Microelectronic Engineering Conference

A surface micromachined MEMS gas flow sensor has been fabricated and tested. The fabrication process of the device was presented. The heater glowed red hot when a voltage of 27V was applied if the underlying LTO was completely etched away. Both the upstream and downstream resistors changed when temperature changed. A proof of concept showing that output voltage changes with gas flow was shown.

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Fabrication Of Polysilicon Micro Valve Array, Jermaine White Jan 2004

Fabrication Of Polysilicon Micro Valve Array, Jermaine White

Journal of the Microelectronic Engineering Conference

Valves are an essential part of pumping systems, which are used in a wide variety of applications including medical, automotive, gas sampling, and gas analysis. The objective of this investigation is to design and fabricate microvalve arrays. The valve consists of a polysilicon flap suspended over a through hole in the silicon. It is intended to allow airflow in one direction and inhibit airflow in the reverse direction. The design requires only three mask levels, two on the front of the wafer and one on the backside. The front side masks are level: 1 Anchor and level 2: Flap. The …

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Study Of Silicon Solar Cell Array To Power Mems Cantilever Actuator, Benjamin Kolodzie Jan 2004

Study Of Silicon Solar Cell Array To Power Mems Cantilever Actuator, Benjamin Kolodzie

Journal of the Microelectronic Engineering Conference

A solar cell array to power a on board microelectromechanical polysilicon cantilever actuator was designed, fabricated and tested. The device composes of two solar cell arrays one array with 330 solar cells and another array with 300 solar cells. The device also consists of several cantilevers. The fabrication process involved over fifty process steps including nine photolithography levels. To optimize the performance of the solar cell array the entire process was simulated using SILVACO SUPREM simulation software. Electrical examination using ATLAS software allowed for parameter extraction of the computer-generated solar cells. Modeling the extracted parameters with device physics equations allowed …

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Fabrication Of A Magnetically Actuated Torsional Beam, Gary A. Fino Jan 2004

Fabrication Of A Magnetically Actuated Torsional Beam, Gary A. Fino

Journal of the Microelectronic Engineering Conference

A mesoscopic magnetic beam contained in a silicon frame attached to the bulk of a silicon wafer with pivoting hinges will be used to show the affects of magnetic fields on movable magnetic structures. The pivoting hinges will be etched out of silicon using a Deep Reactive Ion Etcher (DRIE) system and the dimensions of the hinges will determine the force required to deflect the beam. Below each end of the beam will be large copper inductor coils fabricated on a separate wafer. When a current is applied to the coil, the magnetic field generated will attract the beam towards …

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Mem's Optical Pyrometer, Edward Camacho Jan 2004

Mem's Optical Pyrometer, Edward Camacho

Journal of the Microelectronic Engineering Conference

Measuring temperature accurately has been and still is a topic of interest in various professional fields such as Astronomy, Biology, Physics and Medicine. An optical pyrometer has great potential in these fields, because it can optically capture a body’s black body radiation and determine a temperature value of the body in question. This technology is well known, yet it is still gaining grounds as new uses are found. In this project a temperature sensor using Mentor Graphics was design, second a four level mask was made into one reticle. Third fabrication of the optical sensor took place using typical process …

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Microfluidic Channels In Polymethyl-Methacrylate By Optimizing Aluminum Adhesion, George W. Woodruff Iii Jan 2004

Microfluidic Channels In Polymethyl-Methacrylate By Optimizing Aluminum Adhesion, George W. Woodruff Iii

Journal of the Microelectronic Engineering Conference

A study has been performed to determine the optimum surface treatment to adhere an aluminum hard mask to a polymethyl-methacrylate (PMMA) wafer substrate for the production of microfluidic channels. The initial process parameters of the PMMA reactive ion surface treatment included oxygen plasma, sulfur hexafluoride plasma and argon plasma designs of experiments. However, a soak in tetra methyl ammonium hydroxide (TMAH) proved to provide the most adhereable surface for an aluminum deposition. It is hypothesized that the TMAH soak allowed for the removal of the surface layer of the PMMA wafer substrate. The aluminum hard mask was deposited by evaporation …

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