Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Publication
- Publication Type
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications
We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×1013 cm−2 holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 1013 cm−2 or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …
Behavior Of Grain Boundary Resistivity In Metals Predicted By A Two-Dimensional Model, Rand Dannenberg, Alexander H. King
Behavior Of Grain Boundary Resistivity In Metals Predicted By A Two-Dimensional Model, Rand Dannenberg, Alexander H. King
Alexander H. King
The behavior of a model for the specific grain boundary resistivity in metallic bamboo conductor lines is developed and compared to other theoretical treatments, and to experiment. The grain boundary is modeled as an array of scatterers on a plane. The scatterers are called “vacancy-ion” complexes, in which the vacancy represents the boundary free volume, and the ion is an atom adjacent to the vacancy. Three cases are investigated, that of noninterfering scatterers, a continuum of interfering scatterers, and discrete interfering scatterers. The approximations used lead to a specific grain boundary resistivity ∼10−16 Ω m2 for aluminum, in agreement with …