Engineering Commons^™

High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

We report on quaternary AlInGaN/InGaN multiple quantum well(MQW)light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–njunctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes(LEDs). The obtained data indicate the recombination in p–njunction space charge region to be responsible for a current transport …

Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10⁻³, even a …

Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.

High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude

Faculty Publications

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm²/V s for an electron sheet density of 2.4×10¹²cm⁻². Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The …

Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Faculty Publications

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO₂/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 …

Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska

Faculty Publications

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO₂ surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10⁻²³ A²/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.

Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu

Faculty Publications

We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm²/V s combined with a very large electron sheet density n_s≈1.4×10¹³ cm⁻².The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(n_sμ>2×10¹⁶ V⁻¹ s⁻¹) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in …

Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan

Faculty Publications

We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×10¹³ cm⁻² holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 10¹³ cm⁻² or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …

Rotation-Invariant Synthetic Discriminant Function Filter For Pattern Recognition, Vahid R. Riasati, Partha P. Banerjee, Mustafa A. G. Abushagur, Kenneth B. Howell

Electrical and Computer Engineering Faculty Publications

The ring synthetic discriminant function (RSDF) filter for rotation-invariant response is discussed for pattern recognition. This method uses one half of a slice of the Fourier transform of the object to generate the transfer function of the filter. This is accomplished by rotating the one half of a slice in the Fourier domain through 2π rad about the zero-frequency point of the Fourier plane. This filter has the advantage of always matching at least one half of a slice of the Fourier transform of any rotation of the image. An analytical discussion of the filter construction and correlation results are …

Bulk Micromachining Of Silicon For Moems Prototype, Sung-Dong Suh

Doctoral Dissertations

In this dissertation, the optical application of silicon micromachining technology was investigated in order to create the three-dimensional microstructures that can be used as the components for the MOEMS prototype. These microstructures were designed and fabricated by utilizing corner compensation techniques and silicon bulk micromachining technologies. The fabricated microstructures are silicon mirror arrays that have a 1250 μm etch depth and through-holes across the OE-MCM substrate that has sixteen-fan-out OCDN on front side and a 1mm thickness.

Guided-wave OCDN on MCMs are designed and fabricated to meet the high-speed clocking requirements of next-generation digital systems through a realization of superior …

Kinetics Of Laser Chemical Vapor Deposition Of Carbon And Refractory Metals, Feng Gao

Doctoral Dissertations

Three-dimensional laser chemical vapor deposition (3D-LCVD) has been used to grow rods of carbon, tungsten, titanium, and hafnium from a variety of hydrocarbons and metal halide-based precursors. A novel computerized 3D-LCVD system was designed and successfully used in the experiments. A focused Nd:Yag laser beam (λ = 1.06 μm) was utilized to locally heat up a substrate to deposition temperature. The rods, which grew along the axis of the laser beam, had a typical diameter of 30–80 μm and a length of about 1 mm. The precursors for carbon deposition were the alkynes: propyne, butyne, pentyne, hexyne, and octyne. Propyne …

Cramer-Rao Bound And Optimal Amplitude Estimator Of Superimposed Sinusoidal Signals With Unknown Frequencies, Shaohui Jia

Doctoral Dissertations

This dissertation addresses optimally estimating the amplitudes of superimposed sinusoidal signals with unknown frequencies. The Cramer-Rao Bound of estimating the amplitudes in white Gaussian noise is given, and the maximum likelihood estimator of the amplitudes in this case is shown to be asymptotically efficient at high signal to noise ratio but finite sample size. Applying the theoretical results to signal resolutions, it is shown that the optimal resolution of multiple signals using a finite sample is given by the maximum likelihood estimator of the amplitudes of signals.

Design And Validation Of An Accurate Gps Signal And Receiver Truth Model For Comparing Advanced Receiver Processing Techniques, Phillip Martin Corbell

Theses and Dissertations

Recent increases in the computational power of computers and digital signal processors have made possible new, novel signal tracking techniques in GPS receivers. One such technique is known as Direct Correlators Output Processing (DCOP). This technique replaces individual traditional tracking loops with a single Kalman Filter, which jointly processes the received signals while exploiting their correlated noises. DCOP is innovative in its potential to replace the tried and true classical signal tracking loops. It is also an enabling technology for ultra-tightly coupled GPS/INS (Global Positioning System/Inertial Navigation System). Potential benefits of these new tracking techniques include an order-of-magnitude improvement in …

Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius

Faculty Publications

We report on structural, optical, and electrical properties of Al_xIn_yGa_1−x−yNGaNheterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap,ΔE_g, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔE_g on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in …

Bottom-Up Design Of Artificial Neural Network For Single-Lead Electrocardiogram Beat And Rhythm Classification, Srikanth Thiagarajan

Doctoral Dissertations

Performance improvement in computerized Electrocardiogram (ECG) classification is vital to improve reliability in this life-saving technology. The non-linearly overlapping nature of the ECG classification task prevents the statistical and the syntactic procedures from reaching the maximum performance. A new approach, a neural network-based classification scheme, has been implemented in clinical ECG problems with much success. The focus, however, has been on narrow clinical problem domains and the implementations lacked engineering precision. An optimal utilization of frequency information was missing. This dissertation attempts to improve the accuracy of neural network-based single-lead (lead-II) ECG beat and rhythm classification. A bottom-up approach defined …

Software Tool For Seismic Data Recorder And Analyser, Satish Kumar, Raman Attri, B. Sharma, M. Shamshi

Raman K. Attri

Design and Development of software controlled stand-alone instruments has been identified as the most vital component of national and intemational programs on earthquake hazard and risk management. For in depth investigation and studies, the development of precise instruments designed around computer is emerging very fast. Interacing of personal computer with seismic instrument is an important design task. A design technique based on minimum hardware has been worked out around the parallel printer interface of computer. Hardware and Software for this purpose has been designed to make the instrument interact with computer through parallel port interface. Incorporation of software for seismic …

Characterization Of Poly-Si Thin Films Deposited By Magnetron Sputtering Onto Ni Prelayers, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A method of producing a polycrystalline silicon thin film on a foreign substrate without subsequent annealing has been developed. Thermally evaporated 5–100 nm thick Nifilms served as prelayers for magnetron sputtered Si thin films. A continuous film was obtained as a result of metal induced growth of polysilicon during low temperature (below 600 °C) deposition. The film uniformity is promising for large area device applications. The influence of the Ni prelayer thickness on the grain size of thus obtained films was investigated. Atomic force microscopy and cross-sectional scanning electron microscopy studies revealed features in the 150–600 nm size range while …

Nonlinear Self-Organization In Photorefractive Materials, Partha P. Banerjee, Nickolai Kukhtarev, John O. Dimmock

Electrical and Computer Engineering Faculty Publications

This chapter discusses self-organization and its effects in optics. One of the most exciting and potentially useful areas of current research in optics involves the understanding and exploitation of self-organization in nonlinear optical systems. This self-organization may sometimes lead to the evolution of complex spatial patterns that can be regarded as the nonlinear eigenmodes of the system. Generation of these patterns is characteristically marked by the presence of intensity thresholds. In a nonlinear system with complicated temporal dynamics, it turns out that one cannot retain purity in spatial dimensionality. It is therefore equally important to investigate the dynamics of the …