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1996

Journal of the Microelectronic Engineering Conference

Analysis

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Surface Charge Analysis (Sca) Of 300 Angstrom Thermally Grown Oxides, Briand D. Handel Jan 1996

Surface Charge Analysis (Sca) Of 300 Angstrom Thermally Grown Oxides, Briand D. Handel

Journal of the Microelectronic Engineering Conference

As the microelectronic industry progresses toward smaller devices, a decrease in the thickness of gate oxides accompanies them. High quality cannot be sacrificed as a result of this shrinkage. It is believed that oxide quality can be related to oxide charge density. Total oxide charge is related to a shift in Vt for transistors and believed to be related to oxide breakdown strength.

A surface charge analyzer on loan from the SemiTest Corp. was used to quantify oxide charge densities after thermal oxidation of 300 A oxides under various processing conditions. Variations to the base process included the temperature at …