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Effects Of N-Type Doping On Algan Material Quality, Devendra Diwan

Theses and Dissertations

The field of group III-nitride semiconductors has seen incredible developments during last couple of decades. They are recognized as the most promising materials for a wide field of optoelectronics and electronic devices. Their bandgap ranges from 6.2 eV for AlN to 0.7 eV for InN, covering a wide spectral range from infrared (1.77 mm) to deep ultraviolet (200 nm). Their direct bandgap makes them useful for fabricating optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodetectors. III-nitride semiconductor materials also possess strong bond strengths and exhibit good structural, chemical and thermal stability. These properties make it …