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Full-Text Articles in Engineering
Ionization In Diesel Combustion For On-Board Diagnostics And Engine Control, Tamer Hassan Badawy
Ionization In Diesel Combustion For On-Board Diagnostics And Engine Control, Tamer Hassan Badawy
Wayne State University Dissertations
Diesel engines have been known for their high thermal efficiency and specific power output, but there is concern about engine-out NOx and particulate matter emissions. To meet the current emission standards, advanced diesel engines are fitted with electronically controlled fuel injection systems and sophisticated and expensive after-treatment devices. Further improvements are still needed to meet future goals in better fuel economy and the more stringent emission standards. In order to meet these goals, there is a need for the control of the combustion process to reduce engine-out emissions in real-time and reduce the demand on the after-treatment devices. This requires …
Ion Current Signal Detection During Cold Starting And Idling Operation In A Diesel Engine, Sanket Anil Gujarathi
Ion Current Signal Detection During Cold Starting And Idling Operation In A Diesel Engine, Sanket Anil Gujarathi
Wayne State University Theses
Cold starting of diesel engines is characterized by inherent problems such as long cranking periods and combustion instability leading to an increase in fuel consumption and the emission of high concentrations of hydrocarbons which appear as white smoke. Accordingly, a signal indicative of combustion during cold starting and idling operation is important for combustion and emission control. The ion current signal has been considered for the feedback control of both gasoline and diesel engines. However, the ion current signal produced from the combustion of the heterogeneous charge in diesel engines is weaker compared to that produced from the combustion of …
Effects Of N-Type Doping On Algan Material Quality, Devendra Diwan
Effects Of N-Type Doping On Algan Material Quality, Devendra Diwan
Theses and Dissertations
The field of group III-nitride semiconductors has seen incredible developments during last couple of decades. They are recognized as the most promising materials for a wide field of optoelectronics and electronic devices. Their bandgap ranges from 6.2 eV for AlN to 0.7 eV for InN, covering a wide spectral range from infrared (1.77 mm) to deep ultraviolet (200 nm). Their direct bandgap makes them useful for fabricating optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodetectors. III-nitride semiconductor materials also possess strong bond strengths and exhibit good structural, chemical and thermal stability. These properties make it …