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Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell

Boise State University Theses and Dissertations

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization …