Engineering Commons^™

Simulations Of Artificial Neural Network With Memristive Devices, Thanh Thi Thanh Tran

Boise State University Theses and Dissertations

The memristor has been hypothesized to exist as the missing fourth basic circuit element since 1971 [1]. A memristive device is a new type of electrical device that behaves like a resistor, but can change and remember its internal resistance. This behavior makes memristive devices ideal for use as network weights, which will need to be adjusted as the network tries to acquire correct outputs through a learning process. Recent development of physical memristive-like devices has led to an interest in developing artificial neural networks with memristors.

In this thesis, a circuit for a single node network is designed to …

Cmos Characterization, Modeling, And Circuit Design In The Presence Of Random Local Variation, Benjamin A. Millemon Sr.

Boise State University Theses and Dissertations

Random local variation in CMOS transistors complicates characterization procedures, modeling efforts, simulation tools, and circuit design methodologies in highly scaled CMOS devices. Mismatch is not only a concern for closely matched device pairs in analog circuits; digital circuit designers also have to consider the effects of random variation. Device characterization, modeling, process development, and circuit design engineers have to work together to mitigate the impact of random local variation. This thesis outlines the primary challenges of CMOS characterization, modeling, and circuit design in the presence of random local variation and offers guidelines and solutions to help mitigate and model the …

Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell

Boise State University Theses and Dissertations

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization …

Investigation Of The Current Transmission Hysteresis In Electron Hop Funnels, Marcus Pearlman

Boise State University Theses and Dissertations

To integrate field emitter arrays (FEAs) into microwave vacuum electron devices, the use of insulating funnels, called electron hop funnels, is proposed. Electrons are emitted into the wide end of the funnel, and utilizing secondary electron emission to sustain current, the electrons "hop" up the funnel walls. Eventually the electrons exit the funnel as a denser and more uniform electron beam. To pull the electrons up the funnel, an electrode, called the hop electrode, is placed around the exit of the funnel to generate an electric field between the funnel exit and the electron source. The current transmitted through the …

Methods And Considerations For Testing Resistive Memories, Adam David Johnson

Boise State University Theses and Dissertations

Resistive random access memory (RRAM) has been the topic of many research papers in recent years, as companies begin to look for non-volatile alternatives to NAND Flash. The standard testing methodologies for single devices do not work for most of the RRAM technologies, so new methods must be developed. Parasitic capacitance will destroy the device under test without current compliance circuitry. A test structure with the capability to apply current compliance in either direction was designed, simulated, and tested with electrical results. Pulses greater than 4.0 V were delivered with 100 μA current compliance, and parasitic capacitance was kept below …

Modeling And Measuring The Characteristics Of An Inductively Coupled Plasma Antenna For A Micro-Propulsion System, Sonya Mary Christensen

Boise State University Theses and Dissertations

An ion thruster for satellites on the order of 10-50 kg in mass is currently under development. The thruster uses an Inductively Coupled Plasma (ICP) generated by a flat spiral antenna fabricated using the Low Temperature Co-Fired Ceramic (LTCC) materials system. The antenna operating frequency range (600 MHz to 1 GHz) in LTCC (ε_r=7.8) results in a wavelength on the same order of magnitude as the total length of conductor in the antenna. This condition provides some interesting antenna electric and magnetic field characteristics. The antenna has been modeled using COMSOL Multiphysics® Simulation Software. By changing the geometry …