Engineering Commons^™

High Frequency Injection Sensorless Control For A Permanent Magnet Synchronous Machine Driven By An Fpga Controlled Sic Inverter, Jared Walden

Masters Theses

As motor drive inverters continue to employ Silicon Carbide (SiC) and Gallium Nitride (GaN) devices for power density improvements, sensorless motor control strategies can be developed with field-programmable gate arrays (FPGA) to take advantage of high inverter switching frequencies. Through the FPGA’s parallel processing capabilities, a high control bandwidth sensorless control algorithm can be employed. Sensorless motor control offers cost reductions through the elimination of mechanical position sensors or more reliable electric drive systems by providing additional position and speed information of the electric motor. Back electromotive force (EMF) estimation or model-based methods used for motor control provide precise sensorless …

Design Considerations For Paralleling Multiple Chips In Sic Power Modules, Fei Yang

Masters Theses

With the benefits of fast switching speed, low on-resistance and high thermal conductivity, silicon carbide (SiC) devices are being implemented in converter designs with high efficiency and high power density. Consequently, SiC power modules are needed. However, some of the preestablished package designs for silicon based power modules are not suitable to manifest the advantages of SiC devices. Therefore, this thesis aims at optimizing the package design to utilize the fast switching capability of SiC devices.

First, the power loop parasitic inductance induced by the package can lead to large voltage spikes with the fast switching SiC device. It can …

Sic Band Gap Voltage Reference For Space Applications, Charles Kenneth Roberts

Masters Theses

Electronics for space applications can experience wide temperature swings depending on orientation towards stars and duty cycle of propulsion systems. Energy on satellites primarily comes from radiological thermal generators and / or solar panels. This requires space electronic applications to be energy efficient and have high temperature tolerance. As a result, space electronic systems use high efficiency SMPS [switching mode power supplies].

Currently, there exists SiC [silicon carbide] based electronics that is state of the art for high temperature applications. Commercial manufacturers at this time produce SiC Power MOSFETs [Metal Oxide Semiconductor Field Effect Transistors], which are the switching element …

Ion Irradiation-Induced Microstructural Change In Sic, Chien-Hung Chen

Doctoral Dissertations

The high temperature radiation resistance of nuclear materials has become a key issue in developing future nuclear reactors. Because of its mechanical stability under high-energy neutron irradiation and high temperature, silicon carbide (SiC) has great potential as a structural material in advanced nuclear energy systems.

A newly developed nano-engineered (NE) 3C SiC with a nano-layered stacking fault (SFs) structure has been recently considered as a prospective choice due to enhanced point defect annihilation between layer-type structures, leading to outstanding radiation durability.

The objective of this project was to advance the understanding of gas bubble formation mechanisms under irradiation conditions in …

Characterization And Realization Of High Switching-Speed Capability Of Sic Power Devices In Voltage Source Converter, Zheyu Zhang

Doctoral Dissertations

The emerging wide band-gap, silicon carbide (SiC) power devices greatly improve the switching performance due to their inherent fast switching capability. However, the high switching-speed performance makes their switching behavior become more susceptible to parasitics of the application circuit. In the end, unlike the excellent switching performance of SiC devices tested in manufacturer’ datasheets, the observed switching performance in actual power converters is almost always worse. This dissertation aims at characterization and realization of high switching-speed capability of SiC devices in one of the most widely used converter types, the voltage source converter (VSC).

To evaluate the fast dynamic characteristics …

Electronic Energy Loss Of Heavy Ions And Its Effects In Ceramics, Ke Jin

Doctoral Dissertations

Energy loss of medium energy heavy ions (i.e. Cl, Br, I, and Au) in thin compound foils containing light elements (i.e. silicon carbide and silicon dioxide) is directly measured using a time-of-flight elastic recoil detection analysis (ToF-ERDA) technique. An improved data analysis procedure is proposed to provide the experimentally determined electronic stopping powers. This analysis procedure requires reliable predictions of nuclear stopping. Thus, the nuclear stopping predicted by the Stopping and Range of Ions in Matter (SRIM) code is validated by measuring the angular distribution of 1 MeV Au ions after penetrating a thin silicon nitride foil, using a secondary …

High-Efficiency Three-Phase Current Source Rectifier Using Sic Devices And Delta-Type Topology, Ben Guo

Doctoral Dissertations

In this dissertation, the benefits of the three-phase current source rectifier (CSR) in high power rectifier, data center power supply and dc fast charger for electric vehicles (EV) will be evaluated, and new techniques will be proposed to increase the power efficiency of CSRs.

A new topology, referred as Delta-type Current Source Rectifier (DCSR), is proposed and implemented to reduce the conduction loss by up to 20%. By connecting the three legs in a delta type on ac input side, the dc-link current in DCSR can be shared by two legs at the same time.

To increase the switching speed …

All-Sic Three-Phase Converters For High Efficiency Applications, Fan Xu

Doctoral Dissertations

The dissertation aims to improve the efficiency of three-phase converters using SiC power devices.The methodology to design a high efficiency all-SiC three-phase converter is presented. Four aspects are included: SiC power device evaluation, power loop parasitics analysis, high efficiency current source rectifier, and paralleled current source rectifier system.

The SiC JFET and MOSFET are tested based on voltage source and current source structures respectively. The dissertation proposes a device switching test circuit based on current source topology to simulate current commutation processes. The circuit can evaluate the switching performance and calculate switching loss of a power device used in a …

Design And Control Of High Power Density Motor Drive, Dong Jiang

Doctoral Dissertations

This dissertation aims at developing techniques to achieve high power density in motor drives under the performance requirements for transportation system. Four main factors influencing the power density are the main objects of the dissertation: devices, passive components, pulse width modulation (PWM) methods and motor control methods.

Firstly, the application of SiC devices could improve the power density of the motor drive. This dissertation developed a method of characterizing the SiC device performance in phase-leg with loss estimation, and claimed that with SiC Schottky Barrier Diode the advantage of SiC JFET could benefit the motor drive especially at high temperature. …