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Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel

Theses and Dissertations

Two different semiconductor materials received neutron radiation for assessment of radiation damage. The two materials are undoped bulk Ge and epitaxial Ge_0.991Sn_0.009, which is doped heavily with phosphorous. At room temperature, the Ge sample has direct and indirect bandgaps at 0.78 eV and 0.66 eV, respectively. The Ge_0.991Sn_0.009 sample has direct and indirect bandgaps at 0.72 eV and 0.63 eV, respectively. Two samples of each material were exposed to research reactor neutrons, delivering a 1 MeV equivalent neutron fluence of 2.52 × 10¹⁵ n/cm². In order to assess the radiation …