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Full-Text Articles in Engineering
Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou
Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou
Graduate Theses and Dissertations
Si photonics is a fast-developing technology that impacts many applications such as data centers, 5G, Lidar, and biological/chemical sensing. One of the merits of Si photonics is to integrate electronic and photonic components on a single chip to form a complex functional system that features compact, low-cost, high-performance, and reliability. Among all building blocks, the monolithic integration of lasers on Si encountered substantial challenges. Si and Ge, conventional epitaxial material on Si, are incompetent for light emission due to the indirect bandgap. The current solution compromises the hybrid integration of III-V lasers, which requires growing on separate smaller size substrates …
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Graduate Theses and Dissertations
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …
Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista
Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista
Graduate Theses and Dissertations
This thesis presents computational models of terahertz (THz) photoconductive antenna (PCA) emitter using COMSOL Multiphysics commercial package. A comparison of the computer simulated radiated THz signal against that of an experimentally measured signal of commercial reference LT-GaAs emitter is presented. The two-dimensional model (2D) aimed at calculating the photoconductivity of a black phosphorus (BP) PCA at two laser wavelengths of 780 nm and 1560 nm. The 2D model was applied to the BP PCA emitter and the LT-GaAs devices to compare their simulated performance in terms of the photocurrent and radiated THz signal pulse. The results showed better performance of …
Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique
Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique
Graduate Theses and Dissertations
In this thesis, photodetector based on the zinc oxide and cesium lead bromide hetero structure were fabricated and characterized. Zinc oxide (ZnO) nanoparticles were synthesized using solution processing and cesium lead bromide (CsPbBr3) thin film was synthesized using two step deposition method. Three phonon modes were obtained by the Raman spectroscopy of ZnO nanoparticles. X-ray diffraction spectra of ZnO exhibits five exciton peaks which denotes that the synthesized ZnO structure was of good crystallinity with wurtzite hexagonal phase. The absorbance spectrum of ZnO shows the bandgap (Eg) in the order of 3.5 eV that aligns with reported results. The photoluminescence …
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Graduate Theses and Dissertations
Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …
Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford
Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford
Graduate Theses and Dissertations
Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …