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Full-Text Articles in Engineering
Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou
Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou
Graduate Theses and Dissertations
Si photonics is a fast-developing technology that impacts many applications such as data centers, 5G, Lidar, and biological/chemical sensing. One of the merits of Si photonics is to integrate electronic and photonic components on a single chip to form a complex functional system that features compact, low-cost, high-performance, and reliability. Among all building blocks, the monolithic integration of lasers on Si encountered substantial challenges. Si and Ge, conventional epitaxial material on Si, are incompetent for light emission due to the indirect bandgap. The current solution compromises the hybrid integration of III-V lasers, which requires growing on separate smaller size substrates …
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Graduate Theses and Dissertations
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …
Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista
Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista
Graduate Theses and Dissertations
This thesis presents computational models of terahertz (THz) photoconductive antenna (PCA) emitter using COMSOL Multiphysics commercial package. A comparison of the computer simulated radiated THz signal against that of an experimentally measured signal of commercial reference LT-GaAs emitter is presented. The two-dimensional model (2D) aimed at calculating the photoconductivity of a black phosphorus (BP) PCA at two laser wavelengths of 780 nm and 1560 nm. The 2D model was applied to the BP PCA emitter and the LT-GaAs devices to compare their simulated performance in terms of the photocurrent and radiated THz signal pulse. The results showed better performance of …
Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique
Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique
Graduate Theses and Dissertations
In this thesis, photodetector based on the zinc oxide and cesium lead bromide hetero structure were fabricated and characterized. Zinc oxide (ZnO) nanoparticles were synthesized using solution processing and cesium lead bromide (CsPbBr3) thin film was synthesized using two step deposition method. Three phonon modes were obtained by the Raman spectroscopy of ZnO nanoparticles. X-ray diffraction spectra of ZnO exhibits five exciton peaks which denotes that the synthesized ZnO structure was of good crystallinity with wurtzite hexagonal phase. The absorbance spectrum of ZnO shows the bandgap (Eg) in the order of 3.5 eV that aligns with reported results. The photoluminescence …
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Graduate Theses and Dissertations
Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …
Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford
Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford
Graduate Theses and Dissertations
Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …
The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell
The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell
Electronic Theses and Dissertations
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into …
Non-Reciprocal Wave Transmission In Integrated Waveguide Array Isolators, Tony Yatming Ho
Non-Reciprocal Wave Transmission In Integrated Waveguide Array Isolators, Tony Yatming Ho
Electronic Theses and Dissertations
Non-reciprocal wave transmission is a phenomenon witnessed in certain photonic devices when the wave propagation dynamics through the device along one direction differs greatly from the dynamics along the counter-propagating direction. Specifically, it refers to significant power transfer occurring in one direction, and greatly reduced power transfer in the opposite direction. The resulting effect is to isolate the directionality of wave propagation, allowing transmission to occur along one direction only. Given the popularity of photonic integrated circuits (PIC), in which all the optical components are fabricated on the same chip so that the entire optical system can be made more …
Improved Rf Power Extraction From 1.55um Ge-On-Soi Pin Photodiodes With Load Impedance Optimization, Andrew L. Huard
Improved Rf Power Extraction From 1.55um Ge-On-Soi Pin Photodiodes With Load Impedance Optimization, Andrew L. Huard
Master's Theses
VLSI miniaturization has created the need for high-density, low-cost, monolithically-integrated optical interconnects. High output power photodetectors are needed to directly drive load circuitry, which improves the noise performance and dynamic range of optical communications links by eliminating a post amplifier stage. Elimination of the post amplifier also reduces circuit cost and complexity. A new Si-Ge PIN waveguide photodiode with 31GHz bandwidth and 93% quantum efficiency at 1550nm has been developed by Yin et al., which was fabricated using standard CMOS processes on a Silicon substrate. This thesis demonstrates a method for improving the RF power extraction from these photodiodes by …