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Theses/Dissertations

Electrical and Computer Engineering

2004

Field-effect transistors

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Fabrication, Characterization, And Modeling Of Organic Capacitors, Schottky Diodes, And Field Effect Transistors, Mo Zhu Jul 2004

Fabrication, Characterization, And Modeling Of Organic Capacitors, Schottky Diodes, And Field Effect Transistors, Mo Zhu

Doctoral Dissertations

The objectives of this project are to fabricate, characterize, and model organic microelectronic devices by traditional lithography techniques and Technology Computer Aided Design (TCAD).

Organic microelectronics is becoming a promising field due to its number of advantages in low-cost fabrication for large area substrates. There have been growing studies in organic electronics and optoelectronics. In this project, several organic microelectronic devices are studied with the aid of experimentation and numerical modeling.

Organic metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors consisting of insulating polymer poly(4-vinylphenol) (PVP) have been fabricated by spin-coating, photo lithography, and reactive ion etching techniques. Based on the fabricated …


An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler Mar 2004

An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler

Theses and Dissertations

The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*1016 e/cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements …