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Spin On Glass Etch Processing For The Rit Nmos Process, William Roberts
Spin On Glass Etch Processing For The Rit Nmos Process, William Roberts
Journal of the Microelectronic Engineering Conference
ACCUGLASS 104 was characterized for four micron via etching. The quality of the Spin On Glass (SOG) layer was improved by increasing the cure temperature to 600 degrees c for one hour. A buffered hydrofloric acid diluted 100:1 produced an etch rate of 2700 Angstroms per minute. A plasma etching process was design with a gas mixture of CHF3/CF4/02 in a ratio of 10:3:1.5 wit a regal 700 plasma etcher. The SOG etch rate of this mixture was 600 Angstroms per minute. The selectivity of this plasma for SOG to poly silicon was 12:1. The wet process produced better image …
Standard Cell Realization For The Mentor Graphics Cad Environment, Bion Pohl
Standard Cell Realization For The Mentor Graphics Cad Environment, Bion Pohl
Journal of the Microelectronic Engineering Conference
A common way of designing microelectronic circuits is by the use of standard cells. In advance systems the circuit can be read from a schematic diagram and the computer will select and place the cells and layout the signal paths automatically. In order to do so the computer needs a representation of these cells and a description of the routing design rules. The format and content of these descriptions were investigated for the Mentor Graphics IDEA system and a procedure for building libraries of standard cells was developed. The related data files were then developed to allow the creation of …
Design And Fabrication Of A Pn Junction Photodiode Array, Richard Rogoff
Design And Fabrication Of A Pn Junction Photodiode Array, Richard Rogoff
Journal of the Microelectronic Engineering Conference
An array of photodiodes consisting of various areas and/or metallization schemes were fabricated for use in a photodiode array. The two gate metals used were Aluminum and Aluminum/Ytterbium. The standard RIT PMOS process was modified to obtain a shallow junction depth for the photodiode. All the diodes generated a photocurrent when illuminated, but the Aluminum metal scheme produced better results due to higher open circuit voltages and short circuit currents. The fill factor was also much better on these diodes.