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Synchronous, In-Situ Measurements In Chemical Mechanical Planarization, J. Vlahakis, Chris Rogers, Vincent Manno, Robert White, M. Moinpour, D. Hooper, S. Anjur
Synchronous, In-Situ Measurements In Chemical Mechanical Planarization, J. Vlahakis, Chris Rogers, Vincent Manno, Robert White, M. Moinpour, D. Hooper, S. Anjur
Vincent P. Manno
Achieving device- and wafer-scale planarity in integrated circuit manufacturing is increasingly challenging as device sizes are reduced to and smaller, and wafer sizes are increased from . Hence a better understanding of chemical mechanical planarization (CMP) processes is needed. We report the synchronous, in situ measurement of wafer forces [coefficient of friction (CoF)] and wafer orientation during CMP polishing of BK7 glass wafers and the ex situ measurement of material removal rate (MRR) over a wide range of applied vertical loads and relative rotational velocities. MRR appears to be Prestonian and was significantly reduced by moving the slurry injection location …
In-Situ Measurement Of Pressure And Friction During Cmp Of Contoured Wafers, A. Scarfo, Vincent Manno, Chris Rogers, Sriram Anjur, Mansour Moinpour
In-Situ Measurement Of Pressure And Friction During Cmp Of Contoured Wafers, A. Scarfo, Vincent Manno, Chris Rogers, Sriram Anjur, Mansour Moinpour
Vincent P. Manno
In situ fluid film pressure and interfacial friction measurements during chemical mechanical planarization (CMP) are reported over a range of applied loads (27.6-41.4 kPA or 4-6 psi) and relative pad/wafer velocities . The slurry film pressure beneath contoured test wafers was measured using a novel experimental setup that enables dynamic data collection. The friction data have a repeatability of . The uncertainty of the pressure measurements and the computed down forces were and 20%, respectively. The data indicate that wafer shape, specifically global curvature, is a significant factor in determining the lubrication regime during CMP. Full hydrodynamic lubrication, in which …