Engineering Commons^™

Development And Simulation Of Germanium P-I-N Infrared Detectors, Caitlin Rouse Philippi

Legacy Theses & Dissertations (2009 - 2024)

Important factors for infrared photodetectors are that they are high-performing, low-cost devices. The performance can be characterized through the quantum efficiency, speed and device noise. Germanium (Ge) on silicon (Si) offers a comparable alternative to conventional groups III-V infrared detector materials such as InGaAs, InSb and HgCdTe in order to develop near-infrared (NIR) photodetector devices that operate with a high responsivity and a relatively low dark current without being cooled. As a Group IV material, Ge is compatible with Complementary Metal-Oxide-Semiconductor (CMOS) manufacturing which allows for a high-quality, high-throughput device for minimum cost. As a result of a thermally induced …