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Full-Text Articles in Engineering
Ald Of Ferroelectric Hfo2 Thin Films, Casey J. Gonta
Ald Of Ferroelectric Hfo2 Thin Films, Casey J. Gonta
Journal of the Microelectronic Engineering Conference
No abstract provided.
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Journal of the Microelectronic Engineering Conference
No abstract provided.
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Atomic Layer Of Deposition Of Ferroelectric Hfo2, Casey J. Gonta
Journal of the Microelectronic Engineering Conference
Ferroelectric (FE) materials exhibit spontaneous polarization making them particularly attractive for non-volatile memory and logic applications. Recently, doped hafnium oxide has shown to be ferroelectric in nature expanding its applications to these areas of interest. Ferroelectricity has been reported in atomic layer deposition (ALD) of HfO2 with Al, Y, or Si dopants. Previous work at RIT demonstrated functional ferroelectric field effect transistors (FeFETs) using silicon doped HfO2 (Si:HfO2) as the gate dielectric.
The new addition of a Savannah ALD system at RIT has made deposition of doped HfO2 films possible. Recipes have been developed for deposition of aluminum doped HfO2 …
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Journal of the Microelectronic Engineering Conference
No abstract provided.
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Investigation Of Ald Dielectrics In Silicon Capacitors, Enri Marini
Journal of the Microelectronic Engineering Conference
The goal of this analysis is to scale aluminum oxide films deposited by ALD for use in transistor fabrication with silicon and silicon-germanium substrates and the two metals offer varying work functions for gate control on the transistor level. MOS capacitors were fabricated on six-inch silicon substrates consisting of aluminum-oxide (Al2O3) as the dielectric and aluminum as the gate metal. The Al2O3 was deposited using atomic layer deposition (ALD) with thicknesses of 15nm and 20nm, while the aluminum gate metal was DC sputter deposited containing thickness of approximately 1200 A° . Capacitance values were measured in order to back-calculate the …
Encapsulation For Igzo Thin Film Transistors, Julia Okvath
Encapsulation For Igzo Thin Film Transistors, Julia Okvath
Journal of the Microelectronic Engineering Conference
No abstract provided.
Encapsulation Of Indium-Gallium-Zinc Oxide Thin Film Transistors, Julia Okvath
Encapsulation Of Indium-Gallium-Zinc Oxide Thin Film Transistors, Julia Okvath
Journal of the Microelectronic Engineering Conference
No abstract provided.
Capping Of Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Ald Materials, Julia Okvath
Capping Of Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Ald Materials, Julia Okvath
Journal of the Microelectronic Engineering Conference
Indium-gallium-zinc oxide (IGZO) thin-film transis-tors (TFTs) used in LCD display technologies exhibit significant instability when exposed to thermal stress above 100◦C. Bottom-gate TFTs subjected to prolonged heat treatment at 140◦C experience a voltage shift of 2 V over 120 minutes. Double-gate TFTs experience an even more pronounced shift of 7 V over 120 minutes. This instability is believed to be associated with water molecules incorporated in the PECVD TEOS SiO2 passivation layer, with an enhanced response in the double-gate device due to the liberation of monatomic hydrogen from the reaction of water with the top-gate metal. This research investigates the …