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Articles 31 - 37 of 37
Full-Text Articles in Engineering
Planar Optical Waveguides Using A Silver-Sodium Ion Exchange, V P. Raghavan
Planar Optical Waveguides Using A Silver-Sodium Ion Exchange, V P. Raghavan
Journal of the Microelectronic Engineering Conference
A planar optical waveguide fabrication is reported using a silver-sodium, electric field enhanced, Al thin film masked, ion exchange process. In this study, silver atoms from the thin film replace the sodium ions in soda-lime glass, resulting in a higher index of refraction. It should be noted that soda lime glass was used as a substrate even though it varies in composition, contains metallic impurities and is generally not of optical quality. Problems related with sterling silver and design width are discussed. A better understanding of requirements for coupling light into the waveguide, edge polishing, index profiling, focusing of the …
Nmos Standard Cell Library, Marco Rivero
Nmos Standard Cell Library, Marco Rivero
Journal of the Microelectronic Engineering Conference
A set of standard nMOS cells was designed following the MOSIS lambda-based design rules, with a lambda of 2.0 microns. The nMOS process was modeled using SUPREM II, and each of the cells was simulated in SPICE. The cells, an inverter, two, three, and four input NANDs and NORs, NAND and NOR RS flip-flops, a 2-bit Multiplexer, and a 2-bit Demultiplexer/Decoder, were designed with ICE, an in house CAD tool.
Contamination In Rit Processing, Daniel C. Shire
Contamination In Rit Processing, Daniel C. Shire
Journal of the Microelectronic Engineering Conference
Contamination during processing in RIT’S cleanroom facility is a leading cause in the failure of fabricated devices and circuits. Detection of these contaminants is possible using an ESTEK WIS-600 surface inspection system. Before and after particle counts were taken using this system when processing wafers in many common RIT procedures. It was found that contamination levels were significant in most areas, and cleaning procedures were useful only to remove large particles.
Plasma Damage To Nmos Capacitors, Matthew J. Strong
Plasma Damage To Nmos Capacitors, Matthew J. Strong
Journal of the Microelectronic Engineering Conference
High frequency C-V curves were taken of NMOS capacitors to determine the effect that a RF oxygen plasma has on the underlying thin gate oxide. This plasma was used to remove a positive photoresist. The C-V curves show a threshold voltage shift of 3.75 volts with respect to the undamaged capacitors. The C-V curves also show that the thinner were more affected than the thicker oxides.
Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters
Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters
Journal of the Microelectronic Engineering Conference
A localized oxidation of silicon (LOCOS) process was investigated using nitrogen ion implantation. The doses of 2E12, 2E13, 2E14, and 1E15 atoms/cm2 were implanted through a photoresist mask using the Varian/Extrion 40-100 ion implanter. The results show the initial formation of a LOCOS oxidation. The localized image faded on extended oxidation which indicates the implanted region did not adequately inhibit the diffusion of oxygen.
Ion Implantation To Adjust Nmos Threshold Voltages, Matthew A. Wickham
Ion Implantation To Adjust Nmos Threshold Voltages, Matthew A. Wickham
Journal of the Microelectronic Engineering Conference
NMOS processes require a variety of threshold voltages for differing applications. For this experiment, the threshold voltages of NMOS devices were altered by a using several different ion implant doses (none, 1, 2, 4, and 8e12/cm2) of boron. This shifted the threshold voltage in good agreement with literature values [1].
Integrated Hall Effect Sensor, William H. Wilkinson
Integrated Hall Effect Sensor, William H. Wilkinson
Journal of the Microelectronic Engineering Conference
Experiments relevant to the development an integrated Hall effect sensor have been performed. Carrier concentrations calculated from the Hall voltage generated in samples of bulk silicon did not agree veil with values measured by tour point probe or Van der Pauw techniques. However, the relationship between Hall voltage and magnetic field was highly linear and should produce a well behaved sensor. A sensor design has been proposed, but not fabricated.