Engineering Commons^™

Synthesis And Characterization Of Metal Oxide Semiconductors For Photoelectrochemical Hydrogen Production, Sudhakar Shet

Dissertations

The goal of this thesis is to investigate the properties of metal-oxide thin films on fluorine-doped tin oxide (FTO)-coated glass substrates, prepared by using radio- frequency (RF) reactive magnetron sputtering for photoelectrochemical (PEC) applications. Metal-oxide thin films as a photoelectrode are of special interest for PEC systems to produce hydrogen in an aqueous solution by solar energy due to their low cost and potential stability.

The following list represents some of the accomplishments and results of this work:

• Narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive sputtering in a O₂/N₂ mixture ambient, and ZnO:N films with …

Surface And Bulk Passivation Of Multicrystalline Silicon Solar Cells By Silicon Nitride (H) Layer : Modeling And Experiments, Chuan Li

Dissertations

The objective of this dissertation is to study passivation effects and mechanisms in Si solar cells, specifically, the surface and bulk passivation by hydrogen-rich PECVD silicon nitride (SiN :H) antireflection layer on multicrystalline silicon (me-Si) solar cells.

The passivation of silicon surface can be achieved in two ways: by field-effect passivation and/or by neutralization of interface states. In other words, the deposition should result in a high value of fixed charge, Qf and /or a low value of interface state density, D1. The surface recombination velocity can be described by Shockley-Read-Hall (SRH) statistics.

Current SRH formalisms have failed to explain …

Study Of Si/Sio2 Interface Passivation And Sio2 Reliability On Deuterium Implanted Silicon, Tias Kundu

Dissertations

One of the major defects that contribute to the interface states in the silicon band gap is the dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron effect. Passivation with deuterium annealing has proven to improve the lifetime of the metal oxide semiconductor devices but this technique is not very effective for a multi-level metal-dielectric structure. This work investigates and optimizes incorporation of deuterium by ion implantation into the silicon substrate before the growth of 6.5 nm thin …