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Optical Spectroscopy And Theoretical Modelling Of Carrier Dynamics In Group-Iv Alloy Quantum Dots, Rahnuma Rahman
Optical Spectroscopy And Theoretical Modelling Of Carrier Dynamics In Group-Iv Alloy Quantum Dots, Rahnuma Rahman
Theses and Dissertations
In recent years, Ge1−xSnx alloy quantum dots (QDs) have attracted significant interest due to their potential applications in photodetectors and light emitting devices in visible to mid IR spectral range and compatibility with silicon based platforms. While bulk Ge is an indirect bandgap semiconductor (0.66 eV), direct transitions can be made possible by incorporation of α-Sn at concentrations of ~10%, which however lowers the bandgap. Utilizing quantum confinement by reducing the size to below the Bohr radius also promotes direct transitions and more importantly increases the fundamental transition energies in GeSn alloy QDs, making them suitable for …