Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Keyword
-
- RF MEMS (13)
- Analog and RF IC (9)
- AlN Contour-Mode Resonator (2)
- MEMS (2)
- Piezoelectric (2)
-
- Sensors (2)
- MicroElectroMechanical Systems (MEMS) (1)
- Microelectromechanical systems (MEMS) (1)
- microelectromechanical systems (MEMS) (1)
- piezoelectric resonator. (1)
- AlN contour-mode resonator (1)
- AlN contour-mode resonator (CMR) (1)
- Aluminum nitride (AlN) (1)
- Band-Pass Filter (1)
- CMOS (1)
- Channel-select filters (1)
- Complementary-metal-oxide-semiconductor (CMOS) / microelectromechanical-system (MEMS) oscillator (1)
- Contour-mode resonators (1)
- Cross-sectional dilation mode resonator (1)
- Electromechanical coupling (1)
- Hybrid (1)
- Lamb wave (1)
- Microelectromechanical systems (MEMSs) (1)
- Multi-Frequency Oscillator (1)
- Multifrequency oscillator (1)
- Nonlinearity (1)
- Oscillator (1)
- Phase noise (1)
- Pierce Oscillator (1)
- Pierce oscillator (1)
Articles 1 - 24 of 24
Full-Text Articles in Engineering
Cross-Sectional Dilation Mode Resonator With Very High Electromechanical Coupling Up To 10% Using Aln, Chengjie Zuo, Changhan Yun, Philip Stephanou, Sang-June Park, Chi-Shun Lo, Robert Mikulka, Je-Hsiung Lan, Mario Velez, Ravi Shenoy, Jonghae Kim, Matt Nowak
Cross-Sectional Dilation Mode Resonator With Very High Electromechanical Coupling Up To 10% Using Aln, Chengjie Zuo, Changhan Yun, Philip Stephanou, Sang-June Park, Chi-Shun Lo, Robert Mikulka, Je-Hsiung Lan, Mario Velez, Ravi Shenoy, Jonghae Kim, Matt Nowak
Chengjie Zuo
For the first time in the development of piezoelectric micromechanical resonators, this paper presents a new class of cross-sectional dilation mode resonators (XDMR) that achieve unprecedentedly high electromechanical coupling constant: kt2 up to 10% for aluminum nitride (AlN) based resonators and 19% for zinc oxide (ZnO) based resonators. Detailed discussions on the geometry design, FEM simulation, and process challenge are provided in this paper to give insight on this novel high-kt2 piezoelectric resonator technology and, more importantly, guide the future development of mechanical resonators with coherent 2D/3D mode shapes.
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Aluminum Nitride Reconfigurable Rf-Mems Front-Ends, Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
Aluminum Nitride based piezoelectric microelectromechanical systems (MEMS) technology has the potential to develop a fully integrated radio frequency (RF) platform that satisfies the requirements of next-generation communication standards: reconfigurability, miniaturization, and low power consumption. Here we report on the recent developments of this AlN thin-film based technology, namely resonators, filters, oscillators and switches. These examples highlight how MEMS will enable the mass manufacturing of reconfigurable RF front-ends.
Dual-Mode Resonator And Switchless Reconfigurable Oscillator Based On Piezoelectric Aln Mems Technology, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Dual-Mode Resonator And Switchless Reconfigurable Oscillator Based On Piezoelectric Aln Mems Technology, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
For the first time, this work demonstrates a switchless dual-frequency (472 MHz and 1.94 GHz) reconfigurable CMOS oscillator using a single piezoelectric AlN microelectromechanical-systems resonator with coexisting S0 and S1 Lamb-wave modes of vibration. High performance (high quality factor Q and electromechanical coupling factor kt2 for a resonator and low phase noise for an oscillator) has been achieved for both the resonator and oscillator in terms of dual-mode operation. In particular, 1.94-GHz operation has the best phase noise performance at 1-MHz offset when compared with all previously reported CMOS oscillators that work at a similar frequency.
Reconfigurable Cmos Oscillator Based On Multifrequency Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Reconfigurable Cmos Oscillator Based On Multifrequency Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a reconfigurable complementary-metal-oxide-semiconductor (CMOS) oscillator based on microelectromechanical system (MEMS) resonators operating at four different frequencies (268, 483, 690, and 785 MHz). A bank of multifrequency switchable AlN contour-mode MEMS resonators was connected to a single CMOS oscillator circuit that can be configured to selectively operate in four different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the four different frequencies of operation, showing values between −94 and −70 dBc/Hz at a 1-kHz offset and PN floor values as low as −165 …
Switch-Less Dual-Frequency Reconfigurable Cmos Oscillator Using One Single Piezoelectric Aln Mems Resonator With Co-Existing S0 And S1 Lamb-Wave Modes, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Switch-Less Dual-Frequency Reconfigurable Cmos Oscillator Using One Single Piezoelectric Aln Mems Resonator With Co-Existing S0 And S1 Lamb-Wave Modes, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
For the first time, this work demonstrates a switch-less dual-frequency (472-MHz and 1.94-GHz) reconfigurable CMOS oscillator using a single piezoelectric AlN MEMS resonator with co-existing S0 and S1 Lamb-wave modes of vibration. High performances (high Q and kt2 for a resonator and low phase noise for an oscillator) have been achieved for both the resonator and oscillator in terms of dual-mode operation. Especially, the 1.94-GHz operation has the best phase noise performance when compared with all previously reported CMOS oscillators that work at a similar frequency.
Reconfigurable 4-Frequency Cmos Oscillator Based On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Reconfigurable 4-Frequency Cmos Oscillator Based On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a reconfigurable Complementary Metal Oxide Semiconductor (CMOS) oscillator based on MicroElectroMechanical System (MEMS) resonators operating at 4 different frequencies (268, 483, 690 and 785 MHz). A bank of multi-frequency switchable AlN Contour-Mode MEMS resonators (CMRs) were connected to a single CMOS oscillator circuit that can be configured to selectively operate in 4 different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the 4 different frequencies of operation showing values between -94 and -70 dBc/Hz at 1 KHz offset and PN floor values …
1.5-Ghz Cmos Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.5-Ghz Cmos Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.5 GHz CMOS oscillator based on thickness-field-excited (TFE) piezoelectric AlN MEMS contour-mode resonators (CMRs). The measured phase noise is −85 dBc/Hz at 10 kHz offset frequency and −151 dBc/Hz at 1 MHz. This is the highest frequency MEMS oscillator ever reported using a laterally vibrating mechanical resonator. The high frequency operation has been enabled by optimizing the geometrical design and micro-fabrication process of TFE AlN CMRs, so that a low effective motional resistance around 50 Ω is achieved together with a high unloaded quality factor (Qu) approaching 2500 and simultaneously high …
Multifrequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Technology, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multifrequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Technology, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of multifrequency (176-, 222-, 307-, and 482-MHz) oscillators based on the piezoelectric AlN contour-mode microelectromechanical systems technology. All the oscillators show phase noise values between −88 and −68 dBc/Hz at 1-kHz offset frequency from the carriers and phase noise floor values as low as −160 dBc/Hz at 1-MHz offset. The same Pierce circuit design is employed to sustain oscillations at the four different frequencies; on the other hand, the oscillator core consumes 10 mW. The AlN resonators are currently wire bonded to the integrated circuit realized in the AMIS 0.5-μm 5-V complimentary metal-oxide-semiconductor …
Ghz Range Nanoscaled Aln Contour-Mode Resonant Sensors (Cmr-S) With Self-Sustained Cmos Oscillator, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ghz Range Nanoscaled Aln Contour-Mode Resonant Sensors (Cmr-S) With Self-Sustained Cmos Oscillator, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of nanoscaled AlN Contour-Mode Resonant Sensors (CMR-S) for the detection of volatile organic chemicals (VOC) operating at frequencies above 1 GHz and connected to a chip-based CMOS oscillator circuit for direct frequency read-out. This work shows that by scaling the CMR-S to 250 nm in thickness and by operating at high frequencies (1 GHz) a limit of detection of ~35 zg/µm2 and a fast response time (<1 ms) can be attained. In addition, the capability to detect concentrations of volatile organic compounds such as 2,6 dinitroluene (DNT) as low as 1.5 ppb (4.7 ag/µm2) is experimentally verified.
Single-Ended-To-Differential And Differential-To-Differential Channel-Select Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Gianluca Piazza
Single-Ended-To-Differential And Differential-To-Differential Channel-Select Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of single-ended-to-differential and differential-to-differential (S2D and D2D) channel-select filters based on single-layer (SL) and dual-layer-stacked (DLS) AlN contour-mode MEMS resonators. The key filter performances in terms of insertion loss (as low as 1.4 dB), operating frequency (250-1280 MHz), and out-of-band rejection (up to 60 dB) constitute a significant advancement over all other state-of-the-art RF MEMS technologies. The fabrication process, namely stacking of two piezoelectric AlN layers (600 nm each) and three Pt electrode layers (100 nm each), is fully compatible with the previously demonstrated AlN RF MEMS switch process (also post-CMOS compatible), which …
Very High Frequency Channel-Select Mems Filters Based On Self-Coupled Piezoelectric Aln Contour-Mode Resonators, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Very High Frequency Channel-Select Mems Filters Based On Self-Coupled Piezoelectric Aln Contour-Mode Resonators, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Chengjie Zuo
This paper reports experimental results on single-chip multi-frequency channel-select filters based on self-coupled piezoelectric aluminum nitride (AlN) contour-mode microelectromechanical (MEMS) resonators. Two-port AlN contour-mode resonators are connected in series and electrically coupled using their intrinsic capacitance to realize multi-frequency (94–271 MHz), narrow bandwidth (~0.2%), low insertion loss (~2.3 dB), high off-band rejection (~60 dB) and high linearity (IIP3 ~100 dBmV) channel-select filters on the same chip. This technology enables multi-frequency, high-performance and small-form-factor filter arrays and makes a single-chip multi-band reconfigurable radio frequency (RF) solution possible in the near future.
1.05-Ghz Cmos Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.05-Ghz Cmos Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contour-mode resonators. The oscillator shows a phase noise level of −81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of −146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-μm complementary metal-oxide-semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that …
Novel Electrode Configurations In Dual-Layer Stacked And Switchable Aln Contour-Mode Resonators For Low Impedance Filter Termination And Reduced Insertion Loss, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Novel Electrode Configurations In Dual-Layer Stacked And Switchable Aln Contour-Mode Resonators For Low Impedance Filter Termination And Reduced Insertion Loss, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Chengjie Zuo
This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.
Ss-Dna Functionalized Ultra-Thin-Film Aln Contour-Mode Resonators With Self-Sustained Oscillator For Volatile Organic Chemical Detection, Matteo Rinaldi, Brandon Duick, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ss-Dna Functionalized Ultra-Thin-Film Aln Contour-Mode Resonators With Self-Sustained Oscillator For Volatile Organic Chemical Detection, Matteo Rinaldi, Brandon Duick, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of nanoscale gravimetric sensors based on ultra-thin-film AlN Contour-Mode Resonant Sensor (CMR-S) functionalized with ss-DNA and connected to a chip-based self-sustaining oscillator loop (fabricated in the ON Semiconductor 0.5 μm CMOS process) for direct frequency read-out. The 220 MHz oscillator based on the ultra-thin AlN CMR-S exhibits an Allan Variance of ∼20 Hz for 100 ms gate time. The sensor affinity for the adsorption of volatile organic chemicals such as 2,6 dinitroluene (DNT, a simulant for explosive vapors) is enhanced by functionalizing the top gold electrode of …
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super-high-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt2, in excess of 1.5%. These devices are employed to synthesize …
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Chengjie Zuo
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess …
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with piezoelectric contour-mode transducers. The experimental results indicate that the IABG structure has a stop band from 185 MHz to 240 MHz and is centered around 219 MHz with maximum rejection of 30 dB. The ABG-induced phonon scattering causes a frequency band gap that prohibits the propagation of certain acoustic wavelengths. In this work, the IABG unit cell consists of a high acoustic velocity (V) center material, which is formed by 2-μm-thick AlN sandwiched by …
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) Super High Frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) Aluminum Nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt2, in excess of …
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Wideband Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Demonstration Of Inverse Acoustic Band Gap Structures In Aln And Integration With Piezoelectric Contour Mode Wideband Transducers, Nai-Kuei Kuo, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper presents the first design and demonstration of a novel inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) and its direct integration with contour-mode wideband transducers in the Very High Frequency (VHF) range. This design implements an efficient approach to co-fabricate in-plane AlN electro-acoustic transducers with bulk acoustic waves (BAWs) IABG arrays (10x10). The IABG unit cell consists of a cylindrical high acoustic velocity (V) media, which is held by four thin tethers, surrounded by a low acoustic velocity matrix (air). The center media is formed by 2-μm-thick AlN, which is sandwiched by 200-nm-thick top and bottom …
1.05 Ghz Mems Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.05 Ghz Mems Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.05 GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric Aluminum Nitride (AlN) contour-mode resonators. The oscillator shows a phase noise level of –81 dBc/Hz at 1 kHz offset frequency and a phase noise floor of –146 dBc/Hz, which satisfies the GSM requirements of Ultra High Frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMIS 0.5 μm CMOS process, with the oscillator core consuming only 3.5 mW static power. A simple two-mask process was used to fabricate the LFE AlN resonators from 843 MHz to 1.64 GHz with …
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
In this paper, we present the first demonstration of the monolithic integration of Aluminum Nitride (AlN) micromechanical contour mode technology filters with dual-beam actuated MEMS AlN switches. This integration has lead to the development of the first prototype of a fully-integrated all-mechanical switchable filter. Integration has been demonstrated by using AlN contour-mode MEMS filters at two center frequencies, i.e. 98.7 and 279.9 MHz. The micromechanical switch design used here is a novel three-finger dual-beam topology that improves the isolation and insertion loss of the switch by decreasing the parasitic coupling between the DC and RF signals over a previous AlN …
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between –88 and –68 dBc/Hz at 1 kHz offset and phase noise floors as low as –160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies, while the oscillator core consumes at most 10 mW. The AlN resonators are currently wirebonded to the integrated circuit realized in the AMIS 0.5 μm 5 V CMOS process. This work constitutes a …
Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Carlos R. Perez, Rashed Mahameed, Marcelo B. Pisani, Gianluca Piazza
Hybrid Ultra-Compact 4th Order Band-Pass Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Carlos R. Perez, Rashed Mahameed, Marcelo B. Pisani, Gianluca Piazza
Chengjie Zuo
This work reports on the design, fabrication and testing of a new class of hybrid (filter design using combined electrical and mechanical coupling techniques) ultra-compact (800×120 μm) 4th order band-pass filters based on piezoelectric Aluminum Nitride (AlN) contour-mode microelectromechanical (MEM) resonators. The demonstrated 110 MHz filter shows a low insertion loss of 5.2 dB in air, a high out-of-band rejection of 65 dB, a fractional bandwidth as high as 1.14% (hard to obtain when only conventional electrical coupling is used in the AlN contour-mode technology), and unprecedented 30 dB and 50 dB shape factors of 1.93 and 2.36, respectively. All …