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Low Pressure Chemical Vapor Deposition (Lpcvd) Of Titanium Nitride : Synthesis And Characterization, Sameer Narsinha Dharmadhikari
Low Pressure Chemical Vapor Deposition (Lpcvd) Of Titanium Nitride : Synthesis And Characterization, Sameer Narsinha Dharmadhikari
Theses
Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850 C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction:
rate = 4.35*10-5exp(-5150/T)*(PNH3)1.37(PTicl4)-0.42
The titanium nitride thin …