Engineering Commons^™

Low Pressure Chemical Vapor Deposition (Lpcvd) Of Titanium Nitride : Synthesis And Characterization, Sameer Narsinha Dharmadhikari

Theses

Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850 C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction:

rate = 4.35*10^-5exp(-5150/T)*(P_NH3)^1.37(P_Ticl4)^-0.42

The titanium nitride thin …

Synthesis And Characterization Of Silicon Dioxide Films Using Diethyl Silane And Oxygen, Kiran Kumar

Theses

This study focuses on producing thin and thick silicon dioxide films towards the fabrication of integrated optical sensor capable of monitoring and determining in-situ, the concentration of numerous analyze species simultaneously. In this study, diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. The films were synthesized with two different flow ratios of oxygen to DES in the temperature range of 550°C to 800°C at a constant pressure of 200mTorr. The films deposited with lower oxygen to DES flow ratio have very high growth rate but suffer from high tensile …

Low Pressure Chemical Vapor Deposition Of Silicon Carbonitride Films From Tri(Dimethylamino) Silane, Rajive Shah

Theses

A literature study to investigate the incorporation of silicon into SiC and Si₃N₄ films from various organosilanes was carried out. The Arrhenius activation energy for the synthesis of silicon, silicon carbide and silicon nitride films from various organosilanes range from 165-210 kJ/mol. A review of recent studies have indicated that silicon deposition is the rate determining step in the synthesis of silicon from silane. It is proposed here that this hypothesis can be established for the synthesis of silicon carbide, silicon nitride and silicon carbonitride film. Limited experiments indicated that the silicon deposition is a rate determining …

Synthesis And Characterization Of Lpcvd Sic Films Using Novel Precursors, Mahalingam Bhaskaran

Dissertations

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon.

Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of …

Microporous Silicon Dioxide/Vycor Membranes For Gas Separation, Justin R. Barone

Theses

This study focused on producing membranes for molecular sieving of gases by reducing the pore size of an already existing membrane structure. To do this, SiO₂ was deposited inside the pores of a Vycor tube with initial pore diameter of 4 nm. The film deposition took place by a low pressure chemical vapor deposition (LPCVD) process where diethylsilane (DES) and nitrous oxide (N₂O) were used as precursor gases. A counterflow reactant geometry was used where the precursor gases were flowed on both sides of the porous membrane. This deposition geometry gave higher selectivities and better mechanical stability. …

Fabrication Of Integrated Optic Sensor To Monitor Pollutant Concentration In Effluents, Kiran Chatty

Theses

An attempt has been made to fabricate an integrated optic sensor to monitor pollutant concentration in effluents. Optic fiber has to be coupled to the waveguide in order to send light through the waveguide. In order to facilitate the easy coupling of the fiber to the waveguide, V-grooves were formed in the silicon substrate. In order to achieve this Silicon nitride was deposited to serve as an etch mask. An attempt was made to obtain low stress silicon nitride films.

This work also attempted to synthesize the materials required to fabricate the waveguide. LPCVD processes were developed to produce undoped …

Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride Films As Low Dielectric Constant Materials, Manish Narayan

Theses

Boron nitride thin films were synthesized on Si and quartz wafers by low pressure chemical vapor deposition using borane triethylamine complex and ammonia as precursors. The films were processed at 400°C, 475°C and 550°C at a constant pressure of 0.5 Torr and at different precursor flow ratios.

The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The thickness of the film increased with increasing flow ratio, but, decreased with increasing temperature. The stresses in the film were either mildly tensile or compressive.

The least dielectric constant for the films …

Synthesis Of Boron Nitride/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Chenna Ravindranath

Theses

Since the advent of the idea of ultrafiltration, microporous membranes have come through a long way in establishing a niche as an efficient technology for gas separation applications. More and more research is aimed at reducing pore size towards nanolevels, when separation factor is the criterion rather than the permeability. This work is focused at synthesizing and characterizing microporous inorganic membranes for gas separations by molecular sieving. BN was deposited on mesoporous vycor tubes using triethylamine borane complex (TEAB) and ammonia as precursors. Effect of temperature and deposition geometry on permeability of various gases has been studied. Very high selectivities …

Low Pressure Chemical Vapor Deposition Of Tungsten As An Absorber For X-Ray Masks, Hongyu Chen

Theses

Tungsten film is one of promising materials for X-ray absorber in X-ray Lithography technology because of its high X-ray absorption and refractory properties. This study focus on CVD method to make tungsten film for X-ray absorber.

In this work, a cold wall, single wafer, Spectrum 211 CVD reactor was used for the deposition of tungsten from H, and WF6. The growth kinetics were determined as a function of temperature, pressure and flow ratio. The deposition rate of as deposited tungsten films was found to follow an Arrehnius behavior in the range of 300-500°C with an activation energy of 55.7 kJ/mol. …

Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Tridimethylaminosilane, Xin Lin

Theses

In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using tri(dimethylamino) silane (TDMAS) and ammonia (NH₃). The growth kinetics were determined as a function of temperature in the range of 650 - 900 °C, total pressure in the range of 0.15 - 0.60 Torr, and NH₃/TDMAS flow ratio in the range of 0 - 10. At constant condition of pressure (0.5 Torr), TDMSA flow rate (10 sccm) and NH₃ flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …

Low Pressure Chemical Vapor Deposition Of Copper Films From Cu(I)(Hfac)(Tmvs), Wei-Shang King

Theses

Recently, copper has been found as a possible substitute for Al alloys because of its low resistivity (1.67 μΩ • cm) and potentially improved resistance to electromigration. Conventional physical vapor deposition (PVD) method do not provide the conformal deposition profile for the high density integrated circuit, therefore, chemical vapor deposition (CVD) has become the most promising method for the resulting conformal profile.

In this work, a cold wall, single wafer, CVD tungsten reactor was used for the deposition of copper with Cu(I)(hfac)(tmvs). Film growth rates were between 100 to 800 A/min depending on processing conditions, and an Arrhenius type activation …

Synthesis Of Silicon Oxide/Vycor Composite Membrane Structures By An Optimized Lpcvd Process, Abhijit Datta

Theses

This study is focused on development of highly selective ceramic membrane structures consisting of silicon dioxide films synthesized by low pressure chemical vapor deposition (LPCVD) on mesoporous Vycor substrates. The ability of easily altering the composition of such films by varying the LPCVD processing parameters affords the opportunity of microengineering the pore structure by reducing the diameters of pre-existing pores in the support. The process parameters investigated include, deposition temperature, total pressure, and flow rate of oxygen. Both the kinetics and select properties of the deposits were examined. The growth rate as a function of temperature was seen to follow …

Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Ditertiarybutylsilane, Xiangqun Fan

Theses

In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using DTBS (ditertiarybutylsilane) and ammonia (NH₃). The growth kinetics were determined as a function of temperature in the range of 600-900 00, pressure in the range of 0.2-1.1 Torr, DTBS flow rate in the range of 10-50 sccm, and NH₃/DTBS flow ratio in the range of 5-20. At constant condition of pressure (0.5 Torr), DTBS flow rate (10sccm) and NH₃ flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …