Engineering Commons^™

Low Pressure Chemical Vapor Deposition Of Silicon Carbonitride Films From Tri(Dimethylamino) Silane, Rajive Shah

Theses

A literature study to investigate the incorporation of silicon into SiC and Si₃N₄ films from various organosilanes was carried out. The Arrhenius activation energy for the synthesis of silicon, silicon carbide and silicon nitride films from various organosilanes range from 165-210 kJ/mol. A review of recent studies have indicated that silicon deposition is the rate determining step in the synthesis of silicon from silane. It is proposed here that this hypothesis can be established for the synthesis of silicon carbide, silicon nitride and silicon carbonitride film. Limited experiments indicated that the silicon deposition is a rate determining …

Synthesis And Characterization Of Lpcvd Sic Films Using Novel Precursors, Mahalingam Bhaskaran

Dissertations

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon.

Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of …

Microporous Silicon Dioxide/Vycor Membranes For Gas Separation, Justin R. Barone

Theses

This study focused on producing membranes for molecular sieving of gases by reducing the pore size of an already existing membrane structure. To do this, SiO₂ was deposited inside the pores of a Vycor tube with initial pore diameter of 4 nm. The film deposition took place by a low pressure chemical vapor deposition (LPCVD) process where diethylsilane (DES) and nitrous oxide (N₂O) were used as precursor gases. A counterflow reactant geometry was used where the precursor gases were flowed on both sides of the porous membrane. This deposition geometry gave higher selectivities and better mechanical stability. …