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Alignment In Electron Beam Lithography, Stoyan J. Jeliazkov

Journal of the Microelectronic Engineering Conference

Alignment was accomplished as the ultimate goal in the development of an electron beam lithography process. System was based on LEO EVO 50 scanning electron microscope at RIT’s Semiconductor and Microsystems Fabrication Laboratory (SMFL) with external writing control software package NPGS v 9.0.160. Preliminary work included investigation of line- and area-pattern writing in negative tone AZ nLOF 2020 resist diluted 1:2 with PGMEA and pattern transfer into silicon substrate via plasma etch. Manual alignment with ±100 nm translational accuracy across a 100 μm writing field was demonstrated.