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Cross Platform Alignment (May 2010), Greg Madejski
Cross Platform Alignment (May 2010), Greg Madejski
Journal of the Microelectronic Engineering Conference
Alignment patterns were exposed using a combination of optical lithography and electron beam lithography. Sub-200nm alignment was achieved by using a combination of silicon topography, global, and fine alignment marks. The average misalignment using this combination was .45 microns. Further work must he done in order to test the efficacy of these alignment marks under different types of thin films.
Alignment In Electron Beam Lithography, Stoyan J. Jeliazkov
Alignment In Electron Beam Lithography, Stoyan J. Jeliazkov
Journal of the Microelectronic Engineering Conference
Alignment was accomplished as the ultimate goal in the development of an electron beam lithography process. System was based on LEO EVO 50 scanning electron microscope at RIT’s Semiconductor and Microsystems Fabrication Laboratory (SMFL) with external writing control software package NPGS v 9.0.160. Preliminary work included investigation of line- and area-pattern writing in negative tone AZ nLOF 2020 resist diluted 1:2 with PGMEA and pattern transfer into silicon substrate via plasma etch. Manual alignment with ±100 nm translational accuracy across a 100 μm writing field was demonstrated.