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Articles 31 - 34 of 34
Full-Text Articles in Engineering
Intermetalic Growth Rate In Transient Liquid Phase Sintering Of Pb-Free Solder Interconnects, Shuqing Zhang, John Blendell
Intermetalic Growth Rate In Transient Liquid Phase Sintering Of Pb-Free Solder Interconnects, Shuqing Zhang, John Blendell
The Summer Undergraduate Research Fellowship (SURF) Symposium
Following the electron devices are widely used in daily life, Pb-free solder alloy, as the replacement of Pb solder joint material, needs extensive researches to observe the properties for using and simulation purpose. Solder are used as the joint to connect two work pieces in printed wiring board of electronics. Most lead-free solders comprise tin (Sn) as the majority component, and nominally pure b-Sn is the majority phase in the microstructure of these solders. The most important thing for solder joint that researchers care about is its life cycle. Due to the incomplete of the mechanical profile of Pb-free solder …
Stanford Stratified Structure Solver (S4) Simulation Tool, Chang Liu, Xufeng Wang, Peter Bermel
Stanford Stratified Structure Solver (S4) Simulation Tool, Chang Liu, Xufeng Wang, Peter Bermel
The Summer Undergraduate Research Fellowship (SURF) Symposium
The Stanford Stratified Structure Solver (S4) developed in 2012 allows for fast, accurate prediction of optical propagation through complex 3D structures. However, there have been two key challenges preventing wider use to date: the use of a specialized control language, and the difficulty of incorporating realistic materials parameters. In this project, both concerns have been addressed. We have constructed a graphical user interface as an alternative, using the open-source Rappture platform on nanoHUB. This has been combined with a comprehensive materials database known as PhotonicsDB, which incorporates materials optical data drawn from carefully vetted sources. An Octave script file was …
Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom
Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom
The Summer Undergraduate Research Fellowship (SURF) Symposium
A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS2 rather than silicon. Another target is to determine the sustainability of the MVS model under different transistor tests. To achieve these goals, the MVS model will be used to fit the experimental data on MoS2 …
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
The Effects Of Pressure On Wide Bandgap Gan Semiconductors, William Kang, Linda Tran, Eunja Kim
Undergraduate Research Opportunities Program (UROP)
Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use …