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Full-Text Articles in Engineering
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Theses and Dissertations
This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …
Kinetics Of Radiation-Stimulated Processes On The Surface Of Oxide Materials, T. Tusseyev
Kinetics Of Radiation-Stimulated Processes On The Surface Of Oxide Materials, T. Tusseyev
Eurasian Journal of Physics and Functional Materials
The analysis of the experimental data shows that the processes of gas adsorption and radiation defects accumulation in metal oxides correlate with each other and most likely can be described in terms of equivalent kinetic equations. Given this circumstance, the kinetics of accumulation of radiation defects in oxides of di erent metals was analyzed. The obtained equations were used to analyze: a) the kinetics of accumulation of radiation defects in di erent oxide compounds; b) the data on the destruction of radiationinduced defects in the atmosphere of di erent gases, and on the kinetics of absorption by oxides of oxygen, …
Current-Driven Production Of Vortex-Antivortex Pairs In Planar Josephson Junction Arrays And Phase Cracks In Long-Range Order, Francisco Estellés-Duart, Miguel Ortuño, Andrés M. Somoza, Valerii M. Vinokur, Alex Gurevich
Current-Driven Production Of Vortex-Antivortex Pairs In Planar Josephson Junction Arrays And Phase Cracks In Long-Range Order, Francisco Estellés-Duart, Miguel Ortuño, Andrés M. Somoza, Valerii M. Vinokur, Alex Gurevich
Physics Faculty Publications
Proliferation of topological defects like vortices and dislocations plays a key role in the physics of systems with long-range order, particularly, superconductivity and superfluidity in thin films, plasticity of solids, and melting of atomic monolayers. Topological defects are characterized by their topological charge reflecting fundamental symmetries and conservation laws of the system. Conservation of topological charge manifests itself in extreme stability of static topological defects because destruction of a single defect requires overcoming a huge energy barrier proportional to the system size. However, the stability of driven topological defects remains largely unexplored. Here we address this issue and investigate numerically …
The Effect Of Processing Conditions On The Energetic Diagram Of Cdte Thin Films Studied By Photoluminescence, Shamara P. Collins
The Effect Of Processing Conditions On The Energetic Diagram Of Cdte Thin Films Studied By Photoluminescence, Shamara P. Collins
USF Tampa Graduate Theses and Dissertations
The photovoltaic properties of CdTe-based thin films depend on recombination levels formed in the CdTe layer and at the heterojunction. The localized states are resultant of structural defects (metal sublattice, chalcogen sublattice, interstitial), controlled doping, deposition process, and/or post-deposition annealing. The photoluminescence study of CdTe thin films, from both the bulk and heterojunction, can reveal radiative states due to different defects or impurities. Identification of defects allows for potential explanation of their roles and influence on solar cell performance. A thorough understanding of the material properties responsible for solar cell performance is critical in further advancing the efficiency of devices. …