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Full-Text Articles in Engineering
Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi
Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi
Graduate Theses and Dissertations
The wide bandgap (WBG) characteristics of SiC play a significant and disruptive role in the power electronics industry. The same characteristics make this material a viable choice for high-temperature electronics systems. Leveraging the high-temperature capability of SiC is crucial to automotive, space exploration, aerospace, deep well drilling, and gas turbines. A significant issue with the high-temperature operation is the exponential increase in leakage current. The lower intrinsic carrier concentration of SiC (10-9 cm-3) compared to Si (1010 cm-3) leads to lower leakage over temperature. Several researchers have demonstrated analog and digital circuits designed in SiC. However, a memory module is …
Energy Efficiency In Cmos Power Amplifier Designs For Ultralow Power Mobile Wireless Communication Systems, Selvakumar Mariappan, Jagadheswaran Rajendran, Norlaili Mohd Noh, Harikrishnan Ramiah, Asrulnizam Abd Manaf
Energy Efficiency In Cmos Power Amplifier Designs For Ultralow Power Mobile Wireless Communication Systems, Selvakumar Mariappan, Jagadheswaran Rajendran, Norlaili Mohd Noh, Harikrishnan Ramiah, Asrulnizam Abd Manaf
Turkish Journal of Electrical Engineering and Computer Sciences
Wireless communication standards keep evolving so that the requirement for high data rate operation can be fulfilled. This leads to the efforts in designing high linearity and low power consumption radio frequency power amplifier (RFPA) to support high data rate signal transmission and preserving battery life. The percentage of the DC power of the transceiver utilized by the power amplifier (PA) depends on the efficiency of the PA, user data rate, propagation conditions, signal modulations, and communication protocols. For example, the PA of a WLAN transceiver consumes 49 % of the overall efficiency from the transmitter. Hence, operating the PA …
Modified Recycling Folded Cascode Ota With Enhancement In Transconductance And Output Impedance, Sudheer Raja Venishetty, Kumaravel Sundaram
Modified Recycling Folded Cascode Ota With Enhancement In Transconductance And Output Impedance, Sudheer Raja Venishetty, Kumaravel Sundaram
Turkish Journal of Electrical Engineering and Computer Sciences
A modified recycling folded cascode (MRFC) operational transconductance amplifier (OTA) for achieving high DC gain, slew rate, and unity gain bandwidth (UGB) is proposed in this paper. Positive feedback is adopted to enhance DC gain and unity gain bandwidth. The proposed MRFC OTA is compared with conventional folded cascode (FC), recycling folded cascode (RFC), and other OTAs existing in the literature. Three OTAs, FC, RFC, and MRFC, are realized and implemented using the UMC 180 nm CMOS process for the same bias current of 300 $\mu$A. The designs are simulated in the Cadence Spectre Environment. From the simulation results, it …
Electronically Tunable Mos-Only Current-Mode High-Order Band-Pass Filters, Pipat Prommee, Aphinat Tiamsuphat, Muhammad Taher Abuelmaatti
Electronically Tunable Mos-Only Current-Mode High-Order Band-Pass Filters, Pipat Prommee, Aphinat Tiamsuphat, Muhammad Taher Abuelmaatti
Turkish Journal of Electrical Engineering and Computer Sciences
This paper presents new CMOS current-mode ladder Chebyshev and elliptic band-pass filters (BPFs). The signal flow graph and the network transformation methods are used to synthesize the proposed BPFs by using Chebyshev and elliptic RLC low-pass prototypes. CMOS-based lossy and lossless integrators with grounded capacitors are used to synthesize the proposed BPFs. The proposed filters can be electronically tuned between 10 kHz and 100 MHz by adjusting the bias current from 0.02 $\mu $A to 200 $\mu $A. Both filters use a 1.5 V DC power supply, which leads to low dynamic power consumption. Both filters enjoy total harmonic distortion …
A 2.4-Ghz Highly Linear Derivative Superposition Gilbert Cell Mixer, Samaneh Sedighi, Omid Hashemipour, Massoud Dousti
A 2.4-Ghz Highly Linear Derivative Superposition Gilbert Cell Mixer, Samaneh Sedighi, Omid Hashemipour, Massoud Dousti
Turkish Journal of Electrical Engineering and Computer Sciences
This paper presents a new derivative superposition Gilbert cell to minimize the third-order nonlinear current term of transconductance transistors. To decrease the parasitic capacitance effect on gain, noise figure, and linearity of the circuit, extra inductors and capacitors are added between the switching and transconductance stages. The proposed mixer is simulated in 0.18-$\mu $m RF-CMOS technology with a 1.8-V supply. The results show an improvement of about 23 dBm in IIP3 compared to conventional mixers. The power consumption of this circuit is about 3.96 mW.
Radiation Resistance Testing Of Mosfet And Cmos As A Means Of Risk Management, Akira Tokuhiro, Massimo F. Bertino
Radiation Resistance Testing Of Mosfet And Cmos As A Means Of Risk Management, Akira Tokuhiro, Massimo F. Bertino
Nuclear Engineering and Radiation Science Faculty Research & Creative Works
Whether for military, research (space, accelerator physics) and/or civilian use, risk avoidance against radiation-induced damage is not possible with COTS parts. Thus the sensible approach is risk management. We recommend a sensible risk management approach as follows: 1) know the radiation environment of the intended application to the extent possible; 2) know the effects of ionizing radiation on the component(s) of interest; 3) know the requirements of the application; 4) identify the candidate or chosen components; 5) test the components; 6) design-in safety factor margins to the extent possible.