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An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler

Theses and Dissertations

The effects of radiation on Al_xGa_1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation Al_xGa_1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10¹⁶ e/cm². Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements …