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An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler
An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler
Theses and Dissertations
The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*1016 e/cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements …
Electron Paramagnetic Resonance Spectroscopy And Hall Effect Studies Of The Effects Of Low Energy Electron Energy On Gallium Nitride (Gan), Kevin D. Greene
Electron Paramagnetic Resonance Spectroscopy And Hall Effect Studies Of The Effects Of Low Energy Electron Energy On Gallium Nitride (Gan), Kevin D. Greene
Theses and Dissertations
The nature of native donors in GaN, types and interactions of radiation-induced defects, and damage creation coefficients for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers. Samples produced via molecular beam epitaxy and hydride vapor phase epitaxy, both silicon doped and nominally undoped, were subjected to Van de Graff generator produced monoenergtic electron beams with total fluences of 1016- 1018 electrons/cm2. Nitrogen vacancies are rejected as a possible cause of n-type conductivity in nominally undoped GaN due …