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Tunneling In Si Mos Nanostructures, Amir Shirkhorshidian
Tunneling In Si Mos Nanostructures, Amir Shirkhorshidian
Electrical and Computer Engineering ETDs
In this dissertation, split-gate tunnel barriers in enhancement-mode silicon metal- oxide-semiconductor (MOS) device structures are characterized electrically at liquid helium temperatures (T = 4.2 K) using transport spectroscopy. Tunnel barriers with different gate geometries and barriers implanted with a small number of antimony donor atoms are characterized. Low disorder MOS tunnel barriers are demonstrated and compared to the implanted cases. The ”clean” MOS tunnel barriers are an important proof of principle that disorder free tunnel barriers can be achieved in MOS. The implanted cases provide an important reference for the effects of donors and shallow traps on a MOS tunnel …
Selected Applications Of Silicon Nanopillar Arrays., Behnam Kheyraddini Mousavi
Selected Applications Of Silicon Nanopillar Arrays., Behnam Kheyraddini Mousavi
Electrical and Computer Engineering ETDs
Interaction of optical waves with nanostructures made of various material systems has been the subject of intensive research for many years. These researches have been mainly driven by the need to make smaller optical devices and exploiting the functionalities offered by light-matter interaction in nanoscale. Majority of the nanostructures are fabricated using electron beam (e-beam) lithography that is slow and expensive. As such alternative methods have been developed to enable nanoscale fabrication faster and less expensive. Among these interferometric lithography (IL) is a relatively simple method for quick fabrication of nanostructures. As IL method generates periodic patterns, exploring the potential …