Engineering Commons^™

Synthetic Aperture Optical Imaging Interferometric Microscopy With Improved Image Quality, Preyom K. Dey

Electrical and Computer Engineering ETDs

The resolution limit of optical microscopy can be extended by using Imaging Interferometric Microscopy (IIM), which uses a low numerical aperture (NA) objective lens to achieve resolution equivalent to that of a high-NA objective lens with multiple sub-images. Along with the resolution enhancement challenge, IIM often suffers from poor image quality. In this dissertation, several image quality improvement methods are proposed and verified with simulation and experimental results. Next, techniques to extend the resolution limit of IIM to ≤ 100nm using a low-NA objective lens are demonstrated. An experimental technique of using a grating coupler on …

Optical Angular Scatterometry: In-Line Approach For Roll-2-Roll And Nano-Imprint Fabrication Systems, Juan Jose Faria-Briceno

Electrical and Computer Engineering ETDs

As critical dimensions continue to shrink and structures become more complex, metrology processes are challenging to implement during in-line nanomanufacturing. Non-destructive, non-contact, and high-speed conditions are required to achieve proper metrology processes during in-line manufacturing. Optical scatterometry is a nanoscale metrology tool widely used in integrated circuit manufacturing for characterization and quality control. However, most applications of optical scatterometry operate off-line. A high-speed, in-line, non-contact, non-destructive scatterometry angular system has been demonstrated in this work to scan pattern surfaces during real-time nano-fabrication.

Our system has demonstrated scanning capabilities using flat, 1D and 2D complex structures. The flat surface samples consist …

Pixelated Gasb Membranes For Photovoltaics: Fabrication And Structure-Property Relationships, Vijay Saradhi Mangu

Electrical and Computer Engineering ETDs

In this thesis, I present a reliable and efficient approach to heterogeneous integration of single-crystalline GaSb semiconductors with highly mismatched materials. The mismatch may refer to the crystalline structure and the thermal expansion coefficient of single-crystalline GaSb and the other materials of interest. The strategy of hetero-integration relies on epitaxial lift-off. This approach prevents the formation of extended structural defects that are detrimental to the performance of optoelectronic devices and preserves GaSb growth substrates for potential reuse.

Within my research work, I have overcome some outstanding challenges of epitaxial lift-off of GaSb, and I have demonstrated the operation of single-crystalline …

Tunneling In Si Mos Nanostructures, Amir Shirkhorshidian

Electrical and Computer Engineering ETDs

In this dissertation, split-gate tunnel barriers in enhancement-mode silicon metal- oxide-semiconductor (MOS) device structures are characterized electrically at liquid helium temperatures (T = 4.2 K) using transport spectroscopy. Tunnel barriers with different gate geometries and barriers implanted with a small number of antimony donor atoms are characterized. Low disorder MOS tunnel barriers are demonstrated and compared to the implanted cases. The ”clean” MOS tunnel barriers are an important proof of principle that disorder free tunnel barriers can be achieved in MOS. The implanted cases provide an important reference for the effects of donors and shallow traps on a MOS tunnel …

Selected Applications Of Silicon Nanopillar Arrays., Behnam Kheyraddini Mousavi

Electrical and Computer Engineering ETDs

Interaction of optical waves with nanostructures made of various material systems has been the subject of intensive research for many years. These researches have been mainly driven by the need to make smaller optical devices and exploiting the functionalities offered by light-matter interaction in nanoscale. Majority of the nanostructures are fabricated using electron beam (e-beam) lithography that is slow and expensive. As such alternative methods have been developed to enable nanoscale fabrication faster and less expensive. Among these interferometric lithography (IL) is a relatively simple method for quick fabrication of nanostructures. As IL method generates periodic patterns, exploring the potential …

Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji

Electrical and Computer Engineering ETDs

Study and prediction of classical and non-classical mechanical properties of GaN is crucial due to the potential application of GaN nanowires (NWs) in piezoelectric, probe-based nanometrology, and nanolithography areas. GaN is mainly grown on sapphire substrates whose lattice constant and thermal expansion coefficient are significantly different from GaN. These discrepancies cause mechanical defects and high residual stresses and strains in GaN, which reduce its quantum efficiency.

Specifically, for nanoscale applications, the mechanical properties of materials differ significantly compared to the bulk properties due to size-effects. Therefore, it is essential to investigate the mechanical properties of GaN NWs using the non-classical …