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Synthesis And Characterization Of Silicon Nitride Films Deposited By Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane, Yanyao Yu

Theses

Silicon nitride thin films were deposited on silicon substrates using Diethylsilane (DES) and ammonia by Plasma Enhanced Chemical Vapor Deposition (PECVD) over a temperature range of 100 - 300°C, a pressure range of 0.2 - 0.6 torr, and a ratio of NH₃/DES was varied from 6 - 26. The R.F. power and frequency were kept at 0.15 watts/cm^{2 and 100 KHz respectively. DES flow rate was set at 15 sccm for all experiments in this study. One set of experiments were performed at different values of one parameter while the other parameters were kept constant.}

The deposition …