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Effects Of Implementation Of Decaborane Ions In Silicon, Cheng Li

Dissertations

The next generations of Si microelectronic devices will require ultra shallow p-type junctions formed by implantation of B ions with energies below 1 keV, at which available beam currents are severely limited by space charge effects. To solve this problem, decaborane (B₁₀H₁₄) cluster ion implantation has been suggested as an attractive alternative to conventional B implants, because one decaborane ion implants ten B atoms simultaneously and each of the B atoms only carries approximately 1/11 of the total ion energy. Thus the same implantation depth and dose as with monomer B ions can be obtained using …